公开(公告)号：US11271111B2

公开(公告)日：2022-03-08

申请号：US16405057

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Chun Kuan ,  I-Chih Chen ,  Chih-Mu Huang ,  Fu-Tsun Tsai ,  Sheng-Lin Hsieh ,  Kuan-Jung Chen

IPC: H01L29/78 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L27/088

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.

公开(公告)号：US10153278B1

公开(公告)日：2018-12-11

申请号：US15717972

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Lin Hsieh ,  I-Chih Chen ,  Chih-Mu Huang ,  Ching-Pin Lin ,  Ru-Shang Hsiao ,  Ting-Chun Kuan

IPC: H01L27/08 ,  H01L27/088 ,  H01L29/10 ,  H01L29/08 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/167 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165

Abstract: A fin-type field effect transistor comprising a substrate, at least one gate stack, spacers and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins comprise channel portions and flank portions beside the channel portions, the flank portions and the channel portions of the fins are protruded from the insulators, the flank portions of the fins and the channel portions of the fins have substantially a same height from top surfaces of the insulators, and each of the flank portions of the fins has a top surface and side surfaces adjoining the top surface. The at least one gate stack is disposed over the substrate, disposed on the insulators and over the channel portions of the fins. The spacers are disposed on the side surfaces of the flank portions of the fins. The epitaxy material portions are located above the top surfaces of the flank portions of the fins.