公开(公告)号：US11063149B2

公开(公告)日：2021-07-13

申请号：US16687055

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  National Taiwan University

Inventor： Fang-Liang Lu ,  I-Hsieh Wong ,  Shih-Ya Lin ,  Cheewee Liu ,  Samuel C. Pan

IPC: H01L29/78 ,  H01L29/10 ,  H01L21/02 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/06 ,  H01L21/28 ,  H01L29/66 ,  H01L21/268 ,  H01L21/324

Abstract: A semiconductor device includes a first layer of a first semiconductor material disposed on a semiconductor substrate and a second layer of a second semiconductor material disposed on the first layer. The second semiconductor material is formed of an alloy that includes a first element and a second element. The first semiconductor material and the second semiconductor material are different. A gate structure is disposed on a first portion of the second layer. A surface region of a second portion of the second layer not covered by the gate structure has a higher concentration of the second element than an internal region of the second portion of the second layer, and the surface region surrounds the internal region.

公开(公告)号：US20220246726A1

公开(公告)日：2022-08-04

申请号：US17162896

申请日：2021-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shahaji B. MORE ,  Cheng-Han Lee ,  Shih-Chieh Chang ,  Shih-Ya Lin ,  Chung-En Tsai ,  Chee-Wee Liu

IPC: H01L29/161 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

公开(公告)号：US20230207634A1

公开(公告)日：2023-06-29

申请号：US18178893

申请日：2023-03-06

Applicant: Taiwan Semiconductor Manufacturing co., Ltd.

Inventor： Shahaji B. More ,  Cheng-Han Lee ,  Shih-Chieh Chang ,  Shih-Ya Lin ,  Chung-En Tsai ,  Chee-Wee Liu

IPC: H01L29/161 ,  H01L29/786 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/161 ,  H01L29/78696 ,  H01L29/401 ,  H01L29/66742 ,  H01L29/42392

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

公开(公告)号：US11600703B2

公开(公告)日：2023-03-07

申请号：US17162896

申请日：2021-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shahaji B. More ,  Cheng-Han Lee ,  Shih-Chieh Chang ,  Shih-Ya Lin ,  Chung-En Tsai ,  Chee-Wee Liu

IPC: H01L29/161 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/40

Abstract: The present disclosure describes a semiconductor device includes a substrate, a buffer layer on the substrate, and a stacked fin structure on the buffer layer. The buffer layer can include germanium, and the stacked fin structure can include a semiconductor layer with germanium and tin. The semiconductor device further includes a gate structure wrapped around a portion of the semiconductor layer and an epitaxial structure on the buffer layer and in contact with the semiconductor layer. The epitaxial structure includes germanium and tin.

公开(公告)号：US10510888B2

公开(公告)日：2019-12-17

申请号：US15644597

申请日：2017-07-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL TAIWAN UNIVERSITY

Inventor： Fang-Liang Lu ,  I-Hsieh Wong ,  Shih-Ya Lin ,  CheeWee Liu ,  Samuel C. Pan

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/161 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L21/28 ,  H01L29/66 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.