公开(公告)号：US11640974B2

公开(公告)日：2023-05-02

申请号：US17119346

申请日：2020-12-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Chiang ,  Hung-Chang Sun ,  Sheng-Chih Lai ,  Tsuching Yang ,  Yu-Wei Jiang

IPC: G11C11/22 ,  H01L21/28 ,  H01L29/786 ,  H01L29/78 ,  H01L29/51

Abstract: A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor includes a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line; and a dielectric material separating the source line and the bit line. The dielectric material forms an interface with the OS layer. The dielectric material comprises hydrogen, and a hydrogen concentration at the interface between the dielectric material and the OS layer is no more than 3 atomic percent (at %).