公开(公告)号：US20220336348A1

公开(公告)日：2022-10-20

申请号：US17809914

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

公开(公告)号：US20200350244A1

公开(公告)日：2020-11-05

申请号：US16933551

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

公开(公告)号：US11942419B2

公开(公告)日：2024-03-26

申请号：US17809914

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.