公开(公告)号：US11942419B2

公开(公告)日：2024-03-26

申请号：US17809914

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

公开(公告)号：US09478660B2

公开(公告)日：2016-10-25

申请号：US14677405

申请日：2015-04-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Shiu-Ko Jangjian ,  Chi-Cherng Jeng ,  Chih-Nan Wu ,  Chun-Che Lin ,  Ting-Chun Wang

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.

Abstract translation: 提供了一种翅片场设备结构及其形成方法。 FinFET器件结构包括从衬底延伸的衬底和鳍结构。 FinFET器件结构还包括形成在衬底上的隔离结构。 翅片结构具有顶部和底部，并且底部嵌入隔离结构中。 FinFET器件结构还包括形成在鳍结构的顶部上的保护层。 界面处于保护层和翅片结构的顶部之间，并且界面的粗糙度在约0.1nm至约2.0nm的范围内。

公开(公告)号：US12272708B2

公开(公告)日：2025-04-08

申请号：US18075323

申请日：2022-12-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko Jangjian ,  Chih-Nan Wu ,  Chun-Che Lin ,  Yu-Ku Lin

IPC: H01L27/146

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.

公开(公告)号：US20220336348A1

公开(公告)日：2022-10-20

申请号：US17809914

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

公开(公告)号：US20200350244A1

公开(公告)日：2020-11-05

申请号：US16933551

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JangJian ,  Tsung-Hsuan Hong ,  Chun Che Lin ,  Chih-Nan Wu

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated circuit structure includes a dielectric layer and an etch stop layer. The etch stop layer includes a first sub layer including a metal nitride over the first dielectric layer, and a second sub layer overlying or underlying the first sub layer. The second sub layer includes a metal compound comprising an element selected from carbon and oxygen, and is in contact with the first sub layer.

公开(公告)号：US10818716B2

公开(公告)日：2020-10-27

申请号：US16525372

申请日：2019-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko Jangjian ,  Chih-Nan Wu ,  Chun-Che Lin ,  Yu-Ku Lin

IPC: H01L27/146

Abstract: An image sensor device includes a substrate, a pixel circuit, a dielectric structure, a photo sensitive element, a grid, and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The pixel circuit is disposed on the first side of the substrate. The dielectric structure is disposed on the second side of the substrate. The photo sensitive element is disposed between the pixel circuit and the dielectric structure. The grid is disposed on the dielectric structure. The convex dielectric lens is disposed on the dielectric structure. The convex dielectric lens has a convex side. A topmost of the convex side is above an interface between the dielectric structure and the grid.

公开(公告)号：US10367021B2

公开(公告)日：2019-07-30

申请号：US14109318

申请日：2013-12-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko Jangjian ,  Chih-Nan Wu ,  Chun-Che Lin ,  Yu-Ku Lin

IPC: H01L27/146

Abstract: An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planar side oriented toward the photo sensitive element.

公开(公告)号：US11522001B2

公开(公告)日：2022-12-06

申请号：US17078948

申请日：2020-10-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko Jangjian ,  Chih-Nan Wu ,  Chun-Che Lin ,  Yu-Ku Lin

IPC: H01L27/146

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.

公开(公告)号：US09985133B2

公开(公告)日：2018-05-29

申请号：US15332875

申请日：2016-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko Jangjian ,  Chi-Cherng Jeng ,  Chih-Nan Wu ,  Chun-Che Lin ,  Ting-Chun Wang

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/161 ,  H01L29/20

CPC classification number: H01L29/7851 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.