公开(公告)号：US20150364580A1

公开(公告)日：2015-12-17

申请号：US14483935

申请日：2014-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的锗原子浓度大于外延生长的源极/漏极结构的原子浓度。

公开(公告)号：US20220352033A1

公开(公告)日：2022-11-03

申请号：US17813000

申请日：2022-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20230253262A9

公开(公告)日：2023-08-10

申请号：US17813000

申请日：2022-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165

CPC classification number: H01L21/823821 ,  H01L29/785 ,  H01L29/66795 ,  H01L21/823814 ,  H01L27/0924 ,  H01L21/02532 ,  H01L21/324 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20150364593A1

公开(公告)日：2015-12-17

申请号：US14483617

申请日：2014-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的硅的原子浓度大于外延生长的源极/漏极结构的原子浓度。

公开(公告)号：US20150364579A1

公开(公告)日：2015-12-17

申请号：US14483900

申请日：2014-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的碳原子浓度大于外延生长的源极/漏极结构的碳原子浓度。

公开(公告)号：US20240363439A1

公开(公告)日：2024-10-31

申请号：US18770861

申请日：2024-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

公开(公告)号：US20170076994A1

公开(公告)日：2017-03-16

申请号：US15345279

申请日：2016-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/165 ,  H01L21/324 ,  H01L27/092

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源/漏结构上的半导体保护层。 半导体保护层的硅的原子浓度大于外延生长的源极/漏极结构的原子浓度。

公开(公告)号：US20170069545A1

公开(公告)日：2017-03-09

申请号：US15355626

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Tzu-Kai LIN ,  Chi-Cherng JENG

IPC: H01L21/8238 ,  H01L29/08 ,  H01L29/24 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.

Abstract translation: 提供了半导体器件的结构和形成方法。 半导体器件包括在半导体衬底上的半导体衬底和鳍状结构。 半导体器件还包括覆盖翅片结构的一部分的栅极堆叠以及在鳍结构上并且邻近栅堆叠的外延生长的源极/漏极结构。 半导体器件还包括在外延生长的源极/漏极结构上的半导体保护层。 半导体保护层的碳原子浓度大于外延生长的源极/漏极结构的碳原子浓度。