公开(公告)号：US20240295825A1

公开(公告)日：2024-09-05

申请号：US18660862

申请日：2024-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chun Yen ,  Chi Yang ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00 ,  H05G2/00

CPC classification number: G03F7/70033 ,  G03F7/70891 ,  H05G2/005 ,  H05G2/008

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

公开(公告)号：US10955750B2

公开(公告)日：2021-03-23

申请号：US16512811

申请日：2019-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chun Yen ,  Chi Yang ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03B27/54 ,  G03F7/20 ,  H05G2/00 ,  H01L21/027

Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.

公开(公告)号：US12007694B2

公开(公告)日：2024-06-11

申请号：US17691647

申请日：2022-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chun Yen ,  Chi Yang ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00 ,  H05G2/00

CPC classification number: G03F7/70033 ,  G03F7/70891 ,  H05G2/005 ,  H05G2/008

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

公开(公告)号：US20230132074A1

公开(公告)日：2023-04-27

申请号：US17691647

申请日：2022-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chun Yen ,  Chi Yang ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20 ,  H05G2/00

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

公开(公告)号：US11513441B2

公开(公告)日：2022-11-29

申请号：US17208791

申请日：2021-03-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih Chen ,  Po-Chung Cheng ,  Li-Jui Chen ,  Shang-Chieh Chien ,  Sheng-Kang Yu ,  Wei-Chun Yen

IPC: H05G2/00 ,  G03F7/20 ,  G02B5/08

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.