公开(公告)号：US20230161241A1

公开(公告)日：2023-05-25

申请号：US17749033

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Wei-Hao LEE ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Ching-Fang YU

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

公开(公告)号：US20240384410A1

公开(公告)日：2024-11-21

申请号：US18787915

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Hsin-Chang LEE

IPC: C23C16/455 ,  H01J37/32

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a process chamber. A target substrate is supported in the process chamber. A grid is positioned in the process chamber above the target substrate. The grid includes a plurality of apertures extending from a first side of the grid to a second side of the grid. During a PEALD process, a plasma generator generates a plasma. The energy of the plasma is reduced by passing the plasma through the apertures in the grid prior to reacting the plasma with the target substrate.

公开(公告)号：US20230161261A1

公开(公告)日：2023-05-25

申请号：US17745576

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Huan-Ling LEE ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F7/20

CPC classification number: G03F7/70033

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

公开(公告)号：US20230116213A1

公开(公告)日：2023-04-13

申请号：US17745562

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Hsin-Chang LEE

IPC: G03F1/24 ,  H01L21/033 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a multi-layer capping feature on the reflective multilayer stack. The multi-layer capping feature includes a first capping layer including a material containing an element having a first carbon solubility and a second capping layer including a material containing an element having a second carbon solubility. The first carbon solubility being different from the second carbon solubility. In some embodiments an element of the material of the first capping layer and an element of the second capping layer have extinction coefficients for EUV having a wavelength of 13.5 nm that are different.

公开(公告)号：US20230130162A1

公开(公告)日：2023-04-27

申请号：US17750145

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Hsin-Chang LEE

IPC: C23C16/455 ,  H01J37/32

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a process chamber. A target substrate is supported in the process chamber. A grid is positioned in the process chamber above the target substrate. The grid includes a plurality of apertures extending from a first side of the grid to a second side of the grid. During a PEALD process, a plasma generator generates a plasma. The energy of the plasma is reduced by passing the plasma through the apertures in the grid prior to reacting the plasma with the target substrate.