公开(公告)号：US10164156B2

公开(公告)日：2018-12-25

申请号：US15476370

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Su ,  Hung-Wen Hsu ,  Wei-Chuang Wu ,  Wei-Lin Chen ,  Jiech-Fun Lu

IPC: H01L31/0232 ,  H01L21/00 ,  H01L33/46 ,  H01L27/146 ,  H01L31/056 ,  H01L27/148

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.