公开(公告)号：US10475828B2

公开(公告)日：2019-11-12

申请号：US15868324

申请日：2018-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting Chiang ,  Chun-Yuan Chen ,  Hsiao-Hui Tseng ,  Yu-Jen Wang ,  Shyh-Fann Ting ,  Wei-Chuang Wu ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/11

Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.

公开(公告)号：US11342373B2

公开(公告)日：2022-05-24

申请号：US16842909

申请日：2020-04-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chuang Wu ,  Ming-Tsong Wang ,  Feng-Chi Hung ,  Ching-Chun Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC: H01L27/146

Abstract: A method for manufacturing an image sensing device includes forming an interconnection layer over a front surface of a semiconductor substrate. A trench is formed to extend from a back surface of the semiconductor substrate. An etch stop layer is formed along the trench. A buffer layer is formed over the etch stop layer. An etch process is performed for etching the buffer layer. The buffer layer and the etch stop layer include different materials.

公开(公告)号：US10164156B2

公开(公告)日：2018-12-25

申请号：US15476370

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Su ,  Hung-Wen Hsu ,  Wei-Chuang Wu ,  Wei-Lin Chen ,  Jiech-Fun Lu

IPC: H01L31/0232 ,  H01L21/00 ,  H01L33/46 ,  H01L27/146 ,  H01L31/056 ,  H01L27/148

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

公开(公告)号：US10777590B2

公开(公告)日：2020-09-15

申请号：US16591136

申请日：2019-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting Chiang ,  Chun-Yuan Chen ,  Hsiao-Hui Tseng ,  Yu-Jen Wang ,  Shyh-Fann Ting ,  Wei-Chuang Wu ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/11

Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.

公开(公告)号：US20200243580A1

公开(公告)日：2020-07-30

申请号：US16842909

申请日：2020-04-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chuang Wu ,  Ming-Tsong Wang ,  Feng-Chi Hung ,  Ching-Chun Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC: H01L27/146

Abstract: A method for manufacturing an image sensing device includes forming an interconnection layer over a front surface of a semiconductor substrate. A trench is formed to extend from a back surface of the semiconductor substrate. An etch stop layer is formed along the trench. A buffer layer is formed over the etch stop layer. An etch process is performed for etching the buffer layer. The buffer layer and the etch stop layer include different materials.