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    MEMS MICROPHONE AND MEMS ACCELEROMETER ON A SINGLE SUBSTRATE
    2.
    发明申请
    MEMS MICROPHONE AND MEMS ACCELEROMETER ON A SINGLE SUBSTRATE 有权

    公开(公告)号：US20220289556A1

    公开(公告)日：2022-09-15

    申请号：US17352870

    申请日：2021-06-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai ,  Wen Cheng Kuo

    IPC: B81B3/00 ,  B81C1/00

    Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.

    PARTICLE FILTER FOR MEMS DEVICE
    3.
    发明申请
    PARTICLE FILTER FOR MEMS DEVICE 有权

    公开(公告)号：US20210188627A1

    公开(公告)日：2021-06-24

    申请号：US17192989

    申请日：2021-03-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Wen Cheng Kuo

    IPC: B81C1/00 ,  B81B7/00

    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.

    SUPPORT STRUCTURE FOR MEMS DEVICE WITH PARTICLE FILTER
    6.
    发明申请
    SUPPORT STRUCTURE FOR MEMS DEVICE WITH PARTICLE FILTER 有权

    公开(公告)号：US20210047176A1

    公开(公告)日：2021-02-18

    申请号：US16542489

    申请日：2019-08-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Wen Cheng Kuo

    IPC: B81C1/00 ,  B81B7/00

    Abstract: Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

    Support structure for MEMS device with particle filter
    8.
    发明授权
    Support structure for MEMS device with particle filter 有权

    公开(公告)号：US10968097B2

    公开(公告)日：2021-04-06

    申请号：US16542489

    申请日：2019-08-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Wen Cheng Kuo

    IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  B81C3/00 ,  H01L23/00 ,  H01L23/053

    Abstract: Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

    PARTICLE FILTER FOR MEMS DEVICE
    9.
    发明申请
    PARTICLE FILTER FOR MEMS DEVICE 有权

    公开(公告)号：US20210047175A1

    公开(公告)日：2021-02-18

    申请号：US16542479

    申请日：2019-08-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Wen Cheng Kuo

    IPC: B81C1/00 ,  B81B7/00

    Abstract: Various embodiments of the present disclosure are directed towards a microphone including a particle filter disposed between a microelectromechanical systems (MEMS) substrate and a carrier substrate. A MEMS device structure overlies the MEMS substrate. The MEMS device structure includes a diaphragm having opposing sidewalls that define a diaphragm opening. The carrier substrate underlies the MEMS substrate. The carrier substrate has opposing sidewalls that define a carrier substrate opening underlying the diaphragm opening. A filter stack is sandwiched between the carrier substrate and the MEMS substrate. The filter stack includes an upper dielectric layer, a lower dielectric layer, and a particle filter layer disposed between the upper and lower dielectric layers. The particle filter layer includes the particle filter spaced laterally between the opposing sidewalls of the carrier substrate.

    CMOS-MEMS integration with through-chip via process
    10.
    发明授权
    CMOS-MEMS integration with through-chip via process 有权

    公开(公告)号：US11235969B2

    公开(公告)日：2022-02-01

    申请号：US16420514

    申请日：2019-05-23

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Wen Cheng Kuo ,  Wei-Jhih Mao

    IPC: B81B7/00 ,  B81C1/00 ,  B81C3/00

    Abstract: The integrated CMOS-MEMS device includes a CMOS structure, a cap structure, and a MEMS structure. The CMOS structure, fabricated on a first substrate, includes at least one conducting layer. The cap structure, including vias passing through the cap structure, has an isolation layer deposited on its first side and has a conductive routing layer deposited on its second side. The MEMS structure is deposited between the first substrate and the cap structure. The integrated CMOS-MEMS device also includes a conductive connector that passes through one of the vias and through an opening in the isolation layer on the cap structure. The conductive connector conductively connects a conductive path in the conductive routing layer on the cap structure with the at least one conducting layer of the CMOS structure.

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