公开(公告)号：US20150129987A1

公开(公告)日：2015-05-14

申请号：US14080313

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device also includes a gate over the semiconductor substrate, and the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, and the end portions are over the isolation structure. The semiconductor device further includes a support film over the isolation structure and covering the isolation structure and at least one of the end portions of the gate. The support film exposes the active region and the intermediate portion of the gate.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括半导体衬底和半导体衬底中的隔离结构，并围绕半导体衬底的有源区。 半导体器件还包括半导体衬底上的栅极，并且栅极具有在有源区上方的中间部分和连接到中间部分的两个端部，并且端部在隔离结构上方。 半导体器件还包括隔离结构上的支撑膜，并覆盖隔离结构和栅极的至少一个端部。 支撑膜暴露栅极的有源区域和中间部分。

公开(公告)号：US20200295188A1

公开(公告)日：2020-09-17

申请号：US16892458

申请日：2020-06-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate. The method includes forming a gate over the semiconductor substrate. The method includes forming a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure, the support film conformally covers a first portion of a top surface and a second portion of a first sidewall of the gate, the top surface faces away from the semiconductor substrate, the support film and a topmost surface of the active region do not overlap with each other, and the topmost surface faces the gate. The method includes after forming the support film, forming lightly doped regions in the semiconductor substrate and at two opposite sides of the gate.

公开(公告)号：US20180061987A1

公开(公告)日：2018-03-01

申请号：US15804887

申请日：2017-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： I-Chih CHEN ,  Ying-Lang WANG ,  Chih-Mu HUANG ,  Ying-Hao CHEN ,  Wen-Chang KUO ,  Jung-Chi JENG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/167 ,  H01L29/165

Abstract: A method of fabricating a semiconductor device includes following steps. A trench is formed in a substrate. A barrier layer and an epitaxy layer are formed in sequence in the trench. The barrier layer has a first dopant. A source/drain recess cavity is formed by etching at least the epitaxial layer. A source/drain region is formed in the source/drain recess cavity. The source/drain region has a second dopant.

公开(公告)号：US20170338342A1

公开(公告)日：2017-11-23

申请号：US15670978

申请日：2017-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate, and the isolation structure surrounds an active region of the semiconductor substrate. The method also includes forming a gate over the semiconductor substrate, and the gate is across the active region and extends onto the isolation structure. The gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, the end portions are over the isolation structure. The method includes forming a support film over the isolation structure, and the support film is a continuous film which continuously covers the isolation structure and at least one end portion of the gate.

公开(公告)号：US20150129940A1

公开(公告)日：2015-05-14

申请号：US14080368

申请日：2013-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/49 ,  H01L21/3213 ,  H01L29/06

CPC classification number: H01L21/32135 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/8238 ,  H01L27/085 ,  H01L27/088 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/4916 ,  H01L29/6659

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate. The semiconductor device also includes an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate has an intermediate portion over the active region and two end portions connected to the intermediate portion. Each of the end portions has a first gate length longer than a second gate length of the intermediate portion and is located over the isolation structure.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括半导体衬底。 半导体器件还包括半导体衬底中的隔离结构并且围绕半导体衬底的有源区。 半导体器件包括半导体衬底上的栅极。 该栅极具有在有源区上方的中间部分和与该中间部分连接的两个端部。 每个端部具有长于中间部分的第二栅极长度的第一栅极长度并且位于隔离结构上方。