公开(公告)号：US20200098590A1

公开(公告)日：2020-03-26

申请号：US16138806

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-hsiang Shen ,  Chia-Wei Ho ,  Yang-chun Cheng

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US10692732B2

公开(公告)日：2020-06-23

申请号：US16138806

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-hsiang Shen ,  Chia-Wei Ho ,  Yang-chun Cheng

IPC: H01L21/302 ,  H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/532

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.