公开(公告)号：US11773353B2

公开(公告)日：2023-10-03

申请号：US17172939

申请日：2021-02-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC分类号： H01L21/02 ,  H01L21/302 ,  B08B1/00 ,  C11D11/00 ,  C11D7/26 ,  H01L21/321

CPC分类号： C11D11/0047 ,  C11D7/261 ,  C11D7/268 ,  H01L21/02074 ,  H01L21/3212

摘要： A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US20220384244A1

公开(公告)日：2022-12-01

申请号：US17815975

申请日：2022-07-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pang-Sheng Chang ,  Chao-Hsun Wang ,  Kuo-Yi Chao ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Li-Chieh Wu ,  Chun-Wei Hsu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

公开(公告)号：US11309347B2

公开(公告)日：2022-04-19

申请号：US16788145

申请日：2020-02-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0296

摘要： An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US20210257248A1

公开(公告)日：2021-08-19

申请号：US16944876

申请日：2020-07-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pang-Sheng Chang ,  Chao-Hsun Wang ,  Kuo-YI Chao ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Li-Chieh Wu ,  Chun-Wei Hsu

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

摘要： A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

公开(公告)号：US11094555B2

公开(公告)日：2021-08-17

申请号：US16878473

申请日：2020-05-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Yang-Chun Cheng

IPC分类号： H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/532

摘要： The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US20210183688A1

公开(公告)日：2021-06-17

申请号：US17187059

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC分类号： H01L21/768 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/02

摘要： Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US11923396B2

公开(公告)日：2024-03-05

申请号：US17723127

申请日：2022-04-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/0324 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1832 ,  H01L31/1844

摘要： An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US11637021B2

公开(公告)日：2023-04-25

申请号：US17323951

申请日：2021-05-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC分类号： H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  C09G1/02

摘要： The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US11430691B2

公开(公告)日：2022-08-30

申请号：US16944876

申请日：2020-07-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Pang-Sheng Chang ,  Chao-Hsun Wang ,  Kuo-Yi Chao ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Li-Chieh Wu ,  Chun-Wei Hsu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

公开(公告)号：US11037799B2

公开(公告)日：2021-06-15

申请号：US16400620

申请日：2019-05-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC分类号： H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768 ,  C09G1/02

摘要： The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.