公开(公告)号：US10162258B2

公开(公告)日：2018-12-25

申请号：US15381033

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsuan-Chen Chen ,  Chih-Cheng Lin ,  Hsin-Chang Lee ,  Yao-Ching Ku ,  Wei-Jen Lo ,  Anthony Yen ,  Chin-Hsiang Lin ,  Mark Chien

IPC: G03F1/24 ,  G03F1/62

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

公开(公告)号：US10747103B2

公开(公告)日：2020-08-18

申请号：US16228339

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsuan-Chen Chen ,  Chih-Cheng Lin ,  Hsin-Chang Lee ,  Yao-Ching Ku ,  Wei-Jen Lo ,  Anthony Yen ,  Chin-Hsiang Lin ,  Mark Chien

IPC: G03F1/62 ,  G03F1/24

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.