公开(公告)号：US20240419069A1

公开(公告)日：2024-12-19

申请号：US18335852

申请日：2023-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Yen-Yu KUO ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/004 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid generator ligand bonded to the metal core. The method further includes selectively exposing the photoresist layer to radiation and developing the photoresist layer to form a pattern in the photoresist layer.

公开(公告)号：US20250130499A1

公开(公告)日：2025-04-24

申请号：US18626242

申请日：2024-04-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu KUO ,  An-Ren ZI ,  Ching-Yu CHANG

IPC: G03F7/11 ,  C08L43/04 ,  H01L21/027

Abstract: A resist underlayer composition for extreme ultraviolet lithography is provided. The composition includes a first polymer, a second polymer, an acid generator and a solvent. The first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. The etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. The second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. The crosslinker unit includes one or more crosslinkable groups.

公开(公告)号：US20240329535A1

公开(公告)日：2024-10-03

申请号：US18361298

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu KUO ,  An-Ren ZI ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/09 ,  C09D125/06 ,  C09D133/12 ,  G03F7/004 ,  H01L21/033

CPC classification number: G03F7/091 ,  C09D125/06 ,  C09D133/12 ,  G03F7/0044 ,  H01L21/033

Abstract: A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.