公开(公告)号：US20250147424A1

公开(公告)日：2025-05-08

申请号：US19011395

申请日：2025-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/40 ,  G03F1/82 ,  G03F7/00 ,  G03F7/30 ,  G03F7/32

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US20210302833A1

公开(公告)日：2021-09-30

申请号：US17071004

申请日：2020-10-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: G03F7/004 ,  G03F7/00 ,  H01L21/033

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20230317647A1

公开(公告)日：2023-10-05

申请号：US17827415

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Chen-Yu LIU ,  Yung-Han CHUANG ,  Ming-Da CHENG ,  Ching-Yu CHANG

IPC: H01L23/00 ,  G03F7/42 ,  C11D11/00 ,  C11D3/30

CPC classification number: H01L24/03 ,  G03F7/425 ,  C11D11/0047 ,  C11D3/30 ,  H01L2224/0346 ,  H01L2224/0362

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.

公开(公告)号：US20210202284A1

公开(公告)日：2021-07-01

申请号：US17100218

申请日：2020-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Yang LIN ,  Cheng-Han WU ,  Chen-Yu LIU ,  Kuo-Shu TSENG ,  Shang-Sheng LI ,  Chen Yi HSU ,  Yu-Cheng CHANG

IPC: H01L21/67

Abstract: A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

公开(公告)号：US20210134589A1

公开(公告)日：2021-05-06

申请号：US17019094

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chen-Yu LIU

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/11

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

公开(公告)号：US20230099053A1

公开(公告)日：2023-03-30

申请号：US17737821

申请日：2022-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, portions of an adhesion layer, barrier layer and/or seed layer is protected by a layer of an organic mask material as portions of the adhesion layer, barrier layer and/or seed layer are removed. The layer of organic mask material is modified to improve its resistance to penetration by wet etchants used to remove exposed portions of the adhesion layer, barrier layer and/or seed layer. An example modification includes treating the layer of organic mask material with a surfactant that is absorbed into the layer of organic mask material.

公开(公告)号：US20210103218A1

公开(公告)日：2021-04-08

申请号：US17247301

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu LIU ,  Tzu-Yang LIN ,  Ya-Ching CHANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/11 ,  H01L21/027 ,  H01L29/66 ,  H01L29/10 ,  G03F7/20 ,  H01L21/02 ,  G03F7/16 ,  H01L29/78 ,  G03F7/075

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US20210341844A1

公开(公告)日：2021-11-04

申请号：US17378507

申请日：2021-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/40 ,  G03F7/20 ,  G03F1/82 ,  G03F7/30 ,  G03F7/32

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US20200098558A1

公开(公告)日：2020-03-26

申请号：US16137742

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu LIU ,  Tzu-Yang LIN ,  Ya-Ching CHANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L21/02 ,  G03F7/16 ,  G03F7/20

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US20170345648A1

公开(公告)日：2017-11-30

申请号：US15169162

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu LIU ,  Ching-Yu CHANG

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/306

CPC classification number: H01L21/306 ,  H01L21/0271 ,  H01L21/3105 ,  H01L21/321

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a surface preparation layer over the semiconductor substrate. The surface preparation material layer includes an aziridine structure. A coating layer may then be deposited on the surface preparation material layer.