公开(公告)号：US12300539B2

公开(公告)日：2025-05-13

申请号：US18361770

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H10D30/01 ,  H10D30/62 ,  H10D62/13 ,  H10D62/40 ,  H10D62/832 ,  H10D64/62

Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

公开(公告)号：US12046510B2

公开(公告)日：2024-07-23

申请号：US17339082

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yip Loh ,  Chih-Wei Chang ,  Hong-Mao Lee ,  Chun-Hsien Huang ,  Yu-Ming Huang ,  Yan-Ming Tsai ,  Yu-Shiuan Wang ,  Hung-Hsu Chen ,  Yu-Kai Chen ,  Yu-Wen Cheng

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/285 ,  H01L29/78

CPC classification number: H01L21/76856 ,  H01L21/76805 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/5226 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L21/28518 ,  H01L29/785

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

公开(公告)号：US11257712B2

公开(公告)日：2022-02-22

申请号：US15931111

申请日：2020-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L29/08 ,  H01L29/04 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285 ,  H01L29/78

Abstract: A method includes providing a structure that includes a semiconductor substrate, an epitaxial source/drain feature over the semiconductor substrate, and one or more dielectric layers over the epitaxial source/drain feature; etching a hole into the one or more dielectric layer to expose a portion of the epitaxial source/drain feature; forming a silicide layer over the portion of the epitaxial source/drain feature; forming a conductive barrier layer over the silicide layer; and applying a plasma cleaning process to at least the conductive barrier layer, wherein the plasma cleaning process uses a gas mixture including N2 gas and H2 gas and is performed at a temperature that is at least 300° C.

公开(公告)号：US20210296168A1

公开(公告)日：2021-09-23

申请号：US17339082

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yip Loh ,  Chih-Wei Chang ,  Hong-Mao Lee ,  Chun-Hsien Huang ,  Yu-Ming Huang ,  Yan-Ming Tsai ,  Yu-Shiuan Wang ,  Hung-Hsu Chen ,  Yu-Kai Chen ,  Yu-Wen Cheng

IPC: H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L23/522 ,  H01L29/417 ,  H01L29/66

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

公开(公告)号：US11031286B2

公开(公告)日：2021-06-08

申请号：US15909762

申请日：2018-03-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yip Loh ,  Chih-Wei Chang ,  Hong-Mao Lee ,  Chun-Hsien Huang ,  Yu-Ming Huang ,  Yan-Ming Tsai ,  Yu-Shiuan Wang ,  Hung-Hsu Chen ,  Yu-Kai Chen ,  Yu-Wen Cheng

IPC: H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L23/522 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

公开(公告)号：US20240332076A1

公开(公告)日：2024-10-03

申请号：US18738443

申请日：2024-06-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yip Loh ,  Chih-Wei Chang ,  Hong-Mao Lee ,  Chun-Hsien Huang ,  Yu-Ming Huang ,  Yan-Ming Tsai ,  Yu-Shiuan Wang ,  Hung-Hsu Chen ,  Yu-Kai Chen ,  Yu-Wen Cheng

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76856 ,  H01L21/76805 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/5226 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L21/28518 ,  H01L29/785

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

公开(公告)号：US11742240B2

公开(公告)日：2023-08-29

申请号：US17676638

申请日：2022-02-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76856 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

公开(公告)号：US20230386913A1

公开(公告)日：2023-11-30

申请号：US18361770

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76856 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

公开(公告)号：US20220189825A1

公开(公告)日：2022-06-16

申请号：US17676638

申请日：2022-02-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

公开(公告)号：US20210358804A1

公开(公告)日：2021-11-18

申请号：US15931111

申请日：2020-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei Chang ,  Yu-Ming Huang ,  Ethan Tseng ,  Ken-Yu Chang ,  Yi-Ying Liu

IPC: H01L21/768 ,  H01L29/08 ,  H01L29/04 ,  H01L29/161 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66

Abstract: A method includes providing a structure that includes a semiconductor substrate, an epitaxial source/drain feature over the semiconductor substrate, and one or more dielectric layers over the epitaxial source/drain feature; etching a hole into the one or more dielectric layer to expose a portion of the epitaxial source/drain feature; forming a silicide layer over the portion of the epitaxial source/drain feature; forming a conductive barrier layer over the silicide layer; and applying a plasma cleaning process to at least the conductive barrier layer, wherein the plasma cleaning process uses a gas mixture including N2 gas and H2 gas and is performed at a temperature that is at least 300° C.