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公开(公告)号:US20200176337A1
公开(公告)日:2020-06-04
申请号:US16420186
申请日:2019-05-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/66 , H01L21/56 , H01L21/306
Abstract: An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.
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公开(公告)号:US10672631B2
公开(公告)日:2020-06-02
申请号:US16103933
申请日:2018-08-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/67 , H01L23/00 , H01L21/683 , H01L21/687 , H01L21/56
Abstract: A method and a system for thinning a substrate are provided. The method includes at least the following steps. A liquid seal is provided at an interface between a chuck and a substrate disposed on the chuck. The substrate is thinned during the liquid seal is provided.
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公开(公告)号:US20230230882A1
公开(公告)日:2023-07-20
申请号:US17721109
申请日:2022-04-14
Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.
Inventor: Yi-Chao Mao , Tsung-Fu Tsai , Szu-Wei Lu , Chen-Hua Yu
IPC: H01L21/78 , H01L21/02 , H01L21/683 , H01L23/544 , H01L23/00
CPC classification number: H01L21/78 , H01L21/02076 , H01L21/6836 , H01L23/544 , H01L24/08 , H01L24/80 , H01L2221/68327 , H01L2223/5446 , H01L2224/08145 , H01L2224/80895 , H01L2224/80896
Abstract: Embodiments provide a precutting technique to cut parallel openings at a front surface of a device wafer, then flipping the device wafer over and completing the cut from the back side of the device wafer to singulate a die from the wafer. The precutting technique and back side cutting technique combined provides an indentation in the side surface(s) of the device.
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公开(公告)号:US11056364B2
公开(公告)日:2021-07-06
申请号:US16886800
申请日:2020-05-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/67 , H01L23/00 , H01L21/683 , H01L21/687 , H01L21/56
Abstract: A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled.
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公开(公告)号:US11239180B2
公开(公告)日:2022-02-01
申请号:US16227449
申请日:2018-12-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L23/52 , H01L23/00 , H01L21/768
Abstract: A structure and a formation method of a package structure are provided. The method includes disposing a first semiconductor die over a carrier substrate and forming a first protective layer to surround the first semiconductor die. The method also includes forming a dielectric layer over the first protective layer and the first semiconductor die. The method further includes patterning the dielectric layer to form an opening partially exposing the first semiconductor die and the first protective layer. In addition, the method includes bonding a second semiconductor die to the first semiconductor die after the opening is formed. The method includes forming a second protective layer to surround the second semiconductor die.
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公开(公告)号:US10964609B2
公开(公告)日:2021-03-30
申请号:US16420186
申请日:2019-05-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/56 , H01L21/66 , H01L21/306
Abstract: An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.
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公开(公告)号:US20200294818A1
公开(公告)日:2020-09-17
申请号:US16886800
申请日:2020-05-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/67 , H01L23/00 , H01L21/683 , H01L21/687 , H01L21/56
Abstract: A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled.
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公开(公告)号:US20200058520A1
公开(公告)日:2020-02-20
申请号:US16103933
申请日:2018-08-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Szu-Wei Lu
IPC: H01L21/67 , H01L23/00 , H01L21/56 , H01L21/683 , H01L21/687
Abstract: A method and a system for thinning a substrate are provided. The method includes at least the following steps. A liquid seal is provided at an interface between a chuck and a substrate disposed on the chuck. The substrate is thinned during the liquid seal is provided.
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9.
公开(公告)号:US10518387B2
公开(公告)日:2019-12-31
申请号:US15652244
申请日:2017-07-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Jing-Cheng Lin , Wen-Hua Chang
Abstract: A grinding element mounted on a grinding wheel and a grinding wheel containing the same are provided for grinding. The grinding element includes a grinding tooth, and the grinding tooth includes a grinding material having a framework structure and pores distributed in the framework structure. The framework structure includes a bond material and abrasive particles that are bonded by the bond material. A pore size of the pores is larger than 40 microns but smaller than 70 microns. A manufacturing method for semiconductor packages using the same is also provided.
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10.
公开(公告)号:US20190022827A1
公开(公告)日:2019-01-24
申请号:US15652244
申请日:2017-07-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Chao Mao , Chin-Chuan Chang , Jing-Cheng Lin , Wen-Hua Chang
Abstract: A grinding element mounted on a grinding wheel and a grinding wheel containing the same are provided for grinding. The grinding element includes a grinding tooth, and the grinding tooth includes a grinding material having a framework structure and pores distributed in the framework structure. The framework structure includes a bond material and abrasive particles that are bonded by the bond material. A pore size of the pores is larger than 40 microns but smaller than 70 microns. A manufacturing method for semiconductor packages using the same is also provided.
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