公开(公告)号：US11929261B2

公开(公告)日：2024-03-12

申请号：US17097857

申请日：2020-11-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chuan Chang ,  Szu-Wei Lu ,  Chen-Hua Yu

IPC分类号： H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0655 ,  H01L2224/0233 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2924/15311 ,  H01L2924/181

摘要： A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages.

公开(公告)号：US20220384212A1

公开(公告)日：2022-12-01

申请号：US17884037

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chuan Chang ,  Szu-Wei Lu ,  Chen-Hua Yu

IPC分类号： H01L21/56 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/78

摘要： A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages. Corresponding structures result from these methods.

公开(公告)号：US20200176337A1

公开(公告)日：2020-06-04

申请号：US16420186

申请日：2019-05-23

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Chao Mao ,  Chin-Chuan Chang ,  Szu-Wei Lu

IPC分类号： H01L21/66 ,  H01L21/56 ,  H01L21/306

摘要： An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.

公开(公告)号：US10672631B2

公开(公告)日：2020-06-02

申请号：US16103933

申请日：2018-08-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Chao Mao ,  Chin-Chuan Chang ,  Szu-Wei Lu

IPC分类号： H01L21/67 ,  H01L23/00 ,  H01L21/683 ,  H01L21/687 ,  H01L21/56

摘要： A method and a system for thinning a substrate are provided. The method includes at least the following steps. A liquid seal is provided at an interface between a chuck and a substrate disposed on the chuck. The substrate is thinned during the liquid seal is provided.

公开(公告)号：US20240128157A9

公开(公告)日：2024-04-18

申请号：US17872750

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chuan Chang ,  Szu-Wei Lu ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L23/481 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49838 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L23/49822 ,  H01L24/48 ,  H01L2224/08235 ,  H01L2224/16148 ,  H01L2224/32145 ,  H01L2224/48229 ,  H01L2224/73204 ,  H01L2224/95001 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06544 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/182 ,  H01L2924/37001

摘要： A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The first side of the substrate is attached to a carrier. The substrate is thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the substrate. A device die is bonded to the second connectors. The substrate is singulated into multiple packages.

公开(公告)号：US11515288B2

公开(公告)日：2022-11-29

申请号：US16934631

申请日：2020-07-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chuan Chang ,  Tsei-Chung Fu ,  Jing-Cheng Lin

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/522 ,  H01L23/31

摘要： A method includes providing a die having a contact pad on a top surface and forming a conductive protective layer over the die and covering the contact pad. A molding compound is formed over the die and the conductive protective layer. The conductive protective layer is exposed using a laser drilling process. A redistribution layer (RDL) is formed over the die. The RDL is electrically connected to the contact pad through the conductive protective layer.

公开(公告)号：US11469218B2

公开(公告)日：2022-10-11

申请号：US17073888

申请日：2020-10-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  An-Jhih Su ,  Wei-Yu Chen ,  Ying-Ju Chen ,  Tsung-Shu Lin ,  Chin-Chuan Chang ,  Hsien-Wei Chen ,  Wei-Cheng Wu ,  Li-Hsien Huang ,  Chi-Hsi Wu ,  Der-Chyang Yeh

IPC分类号： H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00

摘要： A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

公开(公告)号：US11094635B2

公开(公告)日：2021-08-17

申请号：US16548202

申请日：2019-08-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chuan Chang ,  Szu-Wei Lu

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/683 ,  H01L25/00

摘要： A package structure is provided. The package structure includes a first redistribution structure and an interposer over the first redistribution structure. The package structure also includes a molding compound layer surrounding the interposer, and a second redistribution structure over the interposer. The molding compound layer is between the first redistribution structure and the second redistribution structure. The package structure further includes a first semiconductor die and a second semiconductor die over the second redistribution structure.

公开(公告)号：US11056364B2

公开(公告)日：2021-07-06

申请号：US16886800

申请日：2020-05-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Chao Mao ,  Chin-Chuan Chang ,  Szu-Wei Lu

IPC分类号： H01L21/67 ,  H01L23/00 ,  H01L21/683 ,  H01L21/687 ,  H01L21/56

摘要： A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled.

公开(公告)号：US10672723B2

公开(公告)日：2020-06-02

申请号：US16392815

申请日：2019-04-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jing-Cheng Lin ,  Chin-Chuan Chang ,  Jui-Pin Hung

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/03 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

摘要： Some embodiments relate to a semiconductor package. The package includes a redistribution layer (RDL), and a first semiconductor die disposed over the RDL. The first semiconductor die includes a plurality of contact pads electrically coupled to the RDL. The RDL enables fan-out connection of the first semiconductor die. A die package is disposed over the first semiconductor die and over the RDL. The die package is coupled to a first surface of the RDL by a plurality of conductive bump structures. The plurality of conductive bump structures laterally surround the plurality of contact pads and have uppermost surfaces that are level with an uppermost surface of the first semiconductor die.