公开(公告)号：US11302734B2

公开(公告)日：2022-04-12

申请号：US16120629

申请日：2018-09-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC分类号： H01L27/146 ,  H01L21/762 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3065

摘要： A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US09337229B2

公开(公告)日：2016-05-10

申请号：US14244562

申请日：2014-04-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chien Nan Tu ,  Yu-Lung Yeh ,  Ming-Hsien Wu ,  Li-Ming Sun

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689

摘要： A semiconductor device includes an epitaxial layer including a first surface and a silicon layer disposed on the first surface and including a second surface opposite to the first surface, wherein the silicon layer includes a plurality of pillars on the second surface, a portion of the plurality of pillars on a predetermined portion of the second surface are in substantially same dimension, each of the plurality of pillars on the predetermined portion of the second surface stands substantially orthogonal to the second surface, the plurality of pillars are configured for absorbing an electromagnetic radiation of a predetermined wavelength projected from the epitaxial layer and generating an electrical energy in response to the absorption of the electromagnetic radiation.

摘要翻译： 半导体器件包括外延层，其包括设置在第一表面上的第一表面和硅层，并且包括与第一表面相对的第二表面，其中硅层在第二表面上包括多个柱，多个部分 在第二表面的预定部分上的支柱的尺寸基本相同，第二表面的预定部分上的多个支柱中的每个支柱大致垂直于第二表面，多个支柱被构造成用于吸收第二表面的电磁辐射 从外延层投影的预定波长并且响应于电磁辐射的吸收而产生电能。

公开(公告)号：US20200006410A1

公开(公告)日：2020-01-02

申请号：US16120629

申请日：2018-09-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC分类号： H01L27/146 ,  H01L21/762 ,  H01L21/3205

摘要： A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US20230387150A1

公开(公告)日：2023-11-30

申请号：US18364662

申请日：2023-08-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Chang Huang ,  Chien Nan Tu ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Ji Heng Jiang

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/102

CPC分类号： H01L27/1461 ,  H01L31/03529 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14638 ,  H01L27/1464 ,  H01L31/0284 ,  H01L27/14607 ,  H01L31/02363 ,  H01L31/102 ,  H01L27/14621 ,  H01L27/14627

摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

公开(公告)号：US10204959B2

公开(公告)日：2019-02-12

申请号：US14583433

申请日：2014-12-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chien-Chang Huang ,  Li-Ming Sun ,  Chien Nan Tu ,  Yi-Ping Pan ,  Yu-Lung Yeh

IPC分类号： H01L27/146

摘要： A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.