公开(公告)号：US09754831B2

公开(公告)日：2017-09-05

申请号：US15243527

申请日：2016-08-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Ching Kuo ,  Yi-Hsiu Chen ,  Jun-Lin Yeh ,  Yung-Chi Lin ,  Li-Han Hsu ,  Wei-Cheng Wu ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/06 ,  H01L2224/05025 ,  H01L2924/2075 ,  H01L2924/20751

摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

公开(公告)号：US20160358818A1

公开(公告)日：2016-12-08

申请号：US15243527

申请日：2016-08-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Ching Kuo ,  Yi-Hsiu Chen ,  Jun-Lin Yeh ,  Yung-Chi Lin ,  Li-Han Hsu ,  Wei-Cheng Wu ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/06 ,  H01L2224/05025 ,  H01L2924/2075 ,  H01L2924/20751

摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

公开(公告)号：US09425126B2

公开(公告)日：2016-08-23

申请号：US14289819

申请日：2014-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Ching Kuo ,  Yi-Hsiu Chen ,  Jun-Lin Yeh ,  Yung-Chi Lin ,  Li-Han Hsu ,  Wei-Cheng Wu ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/06 ,  H01L2224/05025 ,  H01L2924/2075 ,  H01L2924/20751

摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

摘要翻译： 设备及其制造方法，其中金属沉积到开口中，从而形成多个金属焊盘，多个通硅通孔（TSV），多条金属线，多个第一虚拟结构和 多个第二虚拟结构。 多个第一虚拟结构的每一个具有比多个金属线中的每一个的第二宽度大至少约三倍的第一宽度，并且多个第二虚设结构中的一个具有第三宽度， 比所述多个金属线中的每一个的第二宽度大至少约五倍。

公开(公告)号：US20150348872A1

公开(公告)日：2015-12-03

申请号：US14289819

申请日：2014-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Ching Kuo ,  Yi-Hsiu Chen ,  Jun-Lin Yeh ,  Yung-Chi Lin ,  Li-Han Hsu ,  Wei-Cheng Wu ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76879 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/06 ,  H01L2224/05025 ,  H01L2924/2075 ,  H01L2924/20751

摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

摘要翻译： 设备及其制造方法，其中金属沉积到开口中，从而形成多个金属焊盘，多个通硅通孔（TSV），多条金属线，多个第一虚拟结构和 多个第二虚拟结构。 多个第一虚拟结构的每一个具有比多个金属线中的每一个的第二宽度大至少约三倍的第一宽度，并且多个第二虚设结构中的一个具有第三宽度， 比所述多个金属线中的每一个的第二宽度大至少约五倍。