公开(公告)号：US12085751B2

公开(公告)日：2024-09-10

申请号：US17811381

申请日：2022-07-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-kang Liu ,  Chih-Tsung Shih ,  Hau-Yan Lu ,  YingKit Felix Tsui ,  Lee-Shian Jeng

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/134 ,  G02B6/136

CPC分类号： G02B6/122 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12126 ,  G02B2006/12169 ,  G02B2006/12173 ,  G02B6/1342

摘要： Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.