公开(公告)号：US11855143B2

公开(公告)日：2023-12-26

申请号：US17187458

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Ju Lee ,  Chun-Fu Cheng ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC分类号： H01L29/08 ,  H01L29/423 ,  H01L21/02 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/0847 ,  H01L21/02532 ,  H01L21/02609 ,  H01L29/42392 ,  H01L29/456 ,  H01L29/78696

摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.

公开(公告)号：US12094938B2

公开(公告)日：2024-09-17

申请号：US17460847

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Xuan Huang ,  Wang-Chun Huang ,  Yi-Bo Liao ,  Cheng-Ting Chung ,  Hou-Yu Chen ,  Kuan-Lun Cheng ,  Wei Ju Lee

IPC分类号： H01L29/41 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/66742 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/78618 ,  H01L29/78696

摘要： In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.

公开(公告)号：US11929409B2

公开(公告)日：2024-03-12

申请号：US17966086

申请日：2022-10-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wei Ju Lee ,  Chun-Fu Cheng ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC分类号： H01L29/417 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/45

CPC分类号： H01L29/41791 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/45

摘要： Semiconductor device includes a substrate having multiple fins formed from a substrate, a first source/drain feature comprising a first epitaxial layer in contact with a first fin, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion; a fourth epitaxial layer formed on the third epitaxial layer, a second source/drain feature adjacent the first source/drain feature, comprising a first epitaxial layer in contact with a second fin, a second epitaxial layer formed on the first epitaxial layer of the second source/drain feature, a third epitaxial layer formed on the second epitaxial layer of the second source/drain feature, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion of the third epitaxial layer of the second source/drain feature; and a fourth epitaxial layer formed on the third epitaxial layer of the second source/drain feature.

公开(公告)号：US11476342B1

公开(公告)日：2022-10-18

申请号：US17308617

申请日：2021-05-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wei Ju Lee ,  Chun-Fu Cheng ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC分类号： H01L29/417 ,  H01L27/092 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/285 ,  H01L29/45

摘要： Semiconductor device includes substrate having fins, first S/D feature comprising first epitaxial layer contacting first fin, second epitaxial layer on first epitaxial layer, third epitaxial layer on second epitaxial layer, third epitaxial layer comprising center and edge portion higher than center portion, and fourth epitaxial layer on third epitaxial layer, second S/D feature adjacent first S/D feature and comprising first epitaxial layer contacting second fin, second epitaxial layer on first epitaxial layer of second S/D feature, third epitaxial layer on second epitaxial layer of second S/D feature, third epitaxial layer comprising center and edge portion higher than center portion of third epitaxial layer, center and edge portions of third epitaxial layer of first and second S/D features are merging, and fourth epitaxial layer on third epitaxial layer of second S/D feature, S/D contact covering edge and center portions of third epitaxial layers of first and second S/D features.

公开(公告)号：US20230064635A1

公开(公告)日：2023-03-02

申请号：US17460847

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Xuan Huang ,  Wang-Chun Huang ,  Yi-Bo Liao ,  Cheng-Ting Chung ,  Hou-Yu Chen ,  Kuan-Lun Cheng ,  Wei Ju Lee

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/66 ,  H01L29/40

摘要： In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.

公开(公告)号：US20240363702A1

公开(公告)日：2024-10-31

申请号：US18769646

申请日：2024-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Xuan Huang ,  Wang-Chun Huang ,  Yi-Bo Liao ,  Cheng-Ting Chung ,  Hou-Yu Chen ,  Kuan-Lun Cheng ,  Wei Ju Lee

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/66742 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/78618 ,  H01L29/78696

摘要： In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.

公开(公告)号：US20240113173A1

公开(公告)日：2024-04-04

申请号：US18519805

申请日：2023-11-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Ju Lee ,  Chun-Fu Cheng ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC分类号： H01L29/08 ,  H01L21/02 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/0847 ,  H01L21/02532 ,  H01L21/02609 ,  H01L29/42392 ,  H01L29/456 ,  H01L29/78696

摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.

公开(公告)号：US20220278198A1

公开(公告)日：2022-09-01

申请号：US17187458

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Ju Lee ,  Chun-Fu Cheng ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC分类号： H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/45 ,  H01L21/02

摘要： In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.