公开(公告)号：US20240355868A1

公开(公告)日：2024-10-24

申请号：US18761077

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chiun LIN ,  Po-Nien CHEN ,  Chen Hua TSAI ,  Chih-Yung LIN

IPC分类号： H01L21/3205 ,  H01L21/8238 ,  H01L23/522 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC分类号： H01L28/24 ,  H01L21/32051 ,  H01L21/823821 ,  H01L23/5228 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0924 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/6681 ,  H01L29/785 ,  H01L21/823431 ,  H01L21/823493 ,  H01L29/66545 ,  H01L29/7851

摘要： A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

公开(公告)号：US20210288137A1

公开(公告)日：2021-09-16

申请号：US17333660

申请日：2021-05-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yu-Chiun LIN ,  Po-Nien CHEN ,  Chen Hua TSAI ,  Chih-Yung LIN

IPC分类号： H01L49/02 ,  H01L29/10 ,  H01L27/02 ,  H01L27/06 ,  H01L23/522 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/3205

摘要： A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

公开(公告)号：US20240321731A1

公开(公告)日：2024-09-26

申请号：US18735037

申请日：2024-06-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Hsin HU ,  Yu-Chiun LIN ,  Yi-Hsuan CHUNG ,  Chung-Peng HSIEH ,  Chung-Chieh YANG ,  Po-Nien CHEN

IPC分类号： H01L23/522 ,  H10B43/27

CPC分类号： H01L23/5228 ,  H01L28/00 ,  H01L28/24 ,  H10B43/27

摘要： A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.