-
公开(公告)号：US20240357854A1
公开(公告)日：2024-10-24
申请号：US18763198
申请日：2024-07-03
发明人： Yung-Chang Chang , Ming Chyi Liu
IPC分类号： H10K50/818 , H10K59/122 , H10K59/124 , H10K59/131 , H10K59/35 , H10K71/00 , H10K71/20 , H10K102/00
CPC分类号： H10K50/818 , H10K59/122 , H10K59/124 , H10K59/131 , H10K59/35 , H10K71/00 , H10K71/233 , H10K2102/351
摘要： In some embodiments, the present disclosure relates to a device. The device includes an isolation structure disposed over a lower conductor and an additional electrode disposed over the isolation structure. A conductive layer includes a lower horizontal segment disposed on the lower conductor, a vertical segment extending along a sidewall of the isolation structure, and an upper horizontal segment disposed over the isolation structure. The upper horizontal segment has a different thickness than the lower horizontal segment.
-
公开(公告)号：US20230369377A1
公开(公告)日：2023-11-16
申请号：US18354859
申请日：2023-07-19
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14603 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/1462 , H01L27/14627
摘要： Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.
-
公开(公告)号：US20210328174A1
公开(公告)日：2021-10-21
申请号：US17361693
申请日：2021-06-29
发明人： Yung-Chang Chang , Ming Chyi Liu
摘要： In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.
-
公开(公告)号：US10121805B2
公开(公告)日：2018-11-06
申请号：US15454610
申请日：2017-03-09
IPC分类号： H01L31/0328 , H01L27/144 , H01L27/146 , H01L31/036 , H01L31/028 , H01L31/0232 , H01L31/18
摘要： A semiconductor structure is disclosed. The semiconductor substrate includes: a front surface and a back surface; and a heterogeneous radiation-sensing region in the semiconductor substrate, the heterogeneous radiation-sensing region including a top surface, a bottom surface and sidewalls, the top surface being adjacent to the front surface of the semiconductor substrate, the sidewalls being perpendicular to the front surface of the semiconductor substrate, and the bottom surface being parallel to the front surface of the semiconductor substrate. An associated manufacturing method is also disclosed.
-
公开(公告)号：US20230232685A1
公开(公告)日：2023-07-20
申请号：US18186340
申请日：2023-03-20
发明人： Yung-Chang Chang , Ming Chyi Liu
IPC分类号： H10K59/131 , H10K59/122
CPC分类号： H10K59/131 , H10K59/122 , H10K2102/351
摘要： In some embodiments, the present disclosure relates to a display device. The display device includes an isolation structure disposed over a reflector electrode, an additional electrode disposed over the isolation structure, and an optical emitter structure disposed over the additional electrode. A via structure includes a lower horizontal segment disposed on the reflector electrode, a vertical segment extending along a sidewall of the isolation structure, and an upper horizontal segment disposed over the isolation structure. The upper horizontal segment is connected to the lower horizontal segment by the vertical segment.
-
公开(公告)号：US11616209B2
公开(公告)日：2023-03-28
申请号：US17361693
申请日：2021-06-29
发明人： Yung-Chang Chang , Ming Chyi Liu
摘要： In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.
-
公开(公告)号：US20220328556A1
公开(公告)日：2022-10-13
申请号：US17843088
申请日：2022-06-17
IPC分类号： H01L27/146
摘要： Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.
-
公开(公告)号：US10509169B2
公开(公告)日：2019-12-17
申请号：US15875577
申请日：2018-01-19
摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.
-
公开(公告)号：US12084766B2
公开(公告)日：2024-09-10
申请号：US16416947
申请日：2019-05-20
发明人： Yung-Chang Chang , Meng-Yin Tsai , Tung-Hsiung Liu , Liang-Yu Yeh , Chun-Yi Lee , Kuo-Hsi Huang
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02
CPC分类号： C23C16/45553 , C23C16/45527 , C23C16/45548 , C23C16/52 , H01L21/0228
摘要： In an embodiment, an apparatus includes: a susceptor including substrate pockets; a gas injector disposed over the susceptor, the gas injector having first process regions, the gas injector including a first gas mixing hub and first distribution valves connecting the first gas mixing hub to the first process regions; and a controller connected to the gas injector and the susceptor, the controller being configured to: connect a first precursor material and a carrier gas to the first gas mixing hub; mix the first precursor material and the carrier gas in the first gas mixing hub to produce a first precursor gas; rotate the susceptor to rotate a first substrate disposed in one of the substrate pockets; and while rotating the susceptor, control the first distribution valves to sequentially introduce the first precursor gas at each of the first process regions as the first substrate enters each first process region.
-
公开(公告)号：US12066659B2
公开(公告)日：2024-08-20
申请号：US18324212
申请日：2023-05-26
发明人： Yung-Chang Chang , Meng-Han Lin
CPC分类号： G02B6/124 , G02B6/136 , H01L23/48 , G02B6/12002 , G02B6/12004 , G02B6/12019
摘要： Various embodiments of the present disclosure are directed towards an integrated chip including an optical device disposed on a substrate. A dielectric structure overlies the substrate. The dielectric structure comprises one or more sidewalls defining a light channel over a region of the optical device. A protective structure is above the optical device and disposed on opposing sides of the light channel.
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.03 秒)
