公开(公告)号：US20220291306A1

公开(公告)日：2022-09-15

申请号：US17470545

申请日：2021-09-09

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Cheng-Wei Chien ,  Harry-Hak-Lay Chuang ,  Kuei-Hung Shen ,  Kuo-Feng Huang ,  Bo-Hung Lin ,  Chun-Chi Chen

IPC: G01R33/09 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

Abstract: Disclosed methods include placing a semiconductor wafer containing MRAM devices into a first magnetic field that has a magnitude sufficient to magnetically polarize MRAM bits and has a substantially uniform field strength and direction over the entire area of the wafer. The method further includes placing the wafer in a second magnetic field having an opposite field direction, a substantially uniform field strength and direction over the entire area of the wafer, and magnitude less than a design threshold for MRAM bit magnetization reversal. The method further includes determining a presence of malfunctioning MRAM bits by determining that such malfunctioning MRAM bits have a magnetic polarization that was reversed due to exposure to the second magnetic field. Malfunctioning MRAM bits may further be characterized by electrically reading data bits, or by using a chip probe to read one or more of voltage, current, resistances, etc., of the MRAM devices.

公开(公告)号：US09543125B2

公开(公告)日：2017-01-10

申请号：US13855939

申请日：2013-04-03

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Hsiang-Wei Lin ,  Chia-Ho Chen ,  Bo-Hung Lin

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C16/50 ,  H01J37/32449 ,  H01J2237/3323

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) devices enable the generation of a plasma in a plasma zone of a deposition chamber, which reacts with a surface of a substrate to form a deposited film in the fabrication of a semiconductor component. The plasma generator is often positioned over the center of the substrate, and the generated plasma often remains in the vicinity of the plasma generator, resulting in a thicker deposition near the center than at the edges of the substrate. Tighter process control is achievable by positioning one or more electromagnets in a periphery of the plasma zone and supplying power to generate a magnetic field, thereby inducing the charged plasma to achieve a more consistent distribution within the plasma zone and more uniform deposition on the substrate. Variations in the number, configuration, and powering of the electromagnets enable various redistributive effects on the plasma within the plasma zone.

Abstract translation: 等离子体增强化学气相沉积（PECVD）器件能够在沉积室的等离子体区域中产生等离子体，该等离子体区域与衬底的表面反应，以在半导体组件的制造中形成沉积膜。 等离子体发生器通常位于衬底的中心上方，并且所产生的等离子体通常保留在等离子体发生器附近，导致在中心附近比衬底边缘更厚的沉积。 通过将等离子体区域的周边中的一个或多个电磁体定位并提供功率以产生磁场，从而诱导带电等离子体以在等离子体区域内实现更一致的分布和在衬底上更均匀的沉积来实现更严格的过程控制。 电磁体的数量，配置和功率的变化使得能够对等离子体区域内的等离子体进行各种再分配效果。

公开(公告)号：US20140272193A1

公开(公告)日：2014-09-18

申请号：US13855939

申请日：2013-04-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Hsiang-Wei Lin ,  Chia-Ho Chen ,  Bo-Hung Lin

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  C23C16/50 ,  H01J37/32449 ,  H01J2237/3323

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) devices enable the generation of a plasma in a plasma zone of a deposition chamber, which reacts with a surface of a substrate to form a deposited film in the fabrication of a semiconductor component. The plasma generator is often positioned over the center of the substrate, and the generated plasma often remains in the vicinity of the plasma generator, resulting in a thicker deposition near the center than at the edges of the substrate. Tighter process control is achievable by positioning one or more electromagnets in a periphery of the plasma zone and supplying power to generate a magnetic field, thereby inducing the charged plasma to achieve a more consistent distribution within the plasma zone and more uniform deposition on the substrate. Variations in the number, configuration, and powering of the electromagnets enable various redistributive effects on the plasma within the plasma zone.

Abstract translation: 等离子体增强化学气相沉积（PECVD）器件能够在沉积室的等离子体区域中产生等离子体，该等离子体区域与衬底的表面反应，以在半导体组件的制造中形成沉积膜。 等离子体发生器通常位于衬底的中心上方，并且所产生的等离子体通常保留在等离子体发生器附近，导致在中心附近比衬底边缘更厚的沉积。 通过将等离子体区域的周边中的一个或多个电磁体定位并提供功率以产生磁场，从而诱导带电等离子体以在等离子体区域内实现更一致的分布和在衬底上更均匀的沉积来实现更严格的过程控制。 电磁体的数量，配置和功率的变化使得能够对等离子体区域内的等离子体进行各种再分配效果。