公开(公告)号：US20230395689A1

公开(公告)日：2023-12-07

申请号：US18358742

申请日：2023-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/49 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L21/321

CPC分类号： H01L29/4958 ,  H01L21/02074 ,  H01L21/32135 ,  H01L21/32136 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/3212 ,  H01L21/32133 ,  H01L29/4966 ,  H01L29/7851

摘要： A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

公开(公告)号：US10790394B2

公开(公告)日：2020-09-29

申请号：US16390975

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US20190252539A1

公开(公告)日：2019-08-15

申请号：US16390975

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US20170256640A1

公开(公告)日：2017-09-07

申请号：US15601576

申请日：2017-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/66795

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US11764280B2

公开(公告)日：2023-09-19

申请号：US16923867

申请日：2020-07-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L21/321 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L29/4958 ,  H01L21/02074 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/3212 ,  H01L21/32133 ,  H01L21/32135 ,  H01L21/32136 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

摘要： A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

公开(公告)号：US20200343357A1

公开(公告)日：2020-10-29

申请号：US16923867

申请日：2020-07-08

申请人： Taiwan Semiconductor Manufacturing Company. Ltd.

发明人： Po-Chi Wu ,  Chia-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/49 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L21/321

摘要： A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

公开(公告)号：US10714587B2

公开(公告)日：2020-07-14

申请号：US16050687

申请日：2018-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/321

摘要： A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

公开(公告)号：US10269963B2

公开(公告)日：2019-04-23

申请号：US15601576

申请日：2017-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US20180337246A1

公开(公告)日：2018-11-22

申请号：US16050687

申请日：2018-07-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/49 ,  H01L29/78 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/321 ,  H01L21/28

摘要： A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.