公开(公告)号：US5907190A

公开(公告)日：1999-05-25

申请号：US561472

申请日：1995-11-21

申请人： Takae Ishikawa ,  Katsutoshi Mine ,  Hiroyosi Naito ,  Kimio Yamakawa

发明人： Takae Ishikawa ,  Katsutoshi Mine ,  Hiroyosi Naito ,  Kimio Yamakawa

IPC分类号： H01L23/29 ,  H01L23/31

CPC分类号： H01L23/24 ,  H01L23/295 ,  H01L23/3121 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/181

摘要： A semiconductor device in which the surface of the semiconductor element is coated with a cured silicone in which there is dispersed filler having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 characterized in that the concentration of said filler is higher in the layer of said cured material remote from the element than in the layer of said cured material adjoining the element. The method for fabricating such a device comprises coating the surface of a semiconductor element with a curable silicone composition in which there is dispersed a filler having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 and thereafter curing said composition after the elapse of sufficient time for the filler in the layer of the composition adjoining the element to migrate into the layer of said composition remote from the element.

摘要翻译： 一种半导体器件，其中半导体元件的表面涂覆有固化的硅氧烷，其中具有平均粒径为0.01至500微米，比重为0.01至0.95的分散填料，其特征在于所述填料的浓度为 远离元件的所述固化材料的层中高于邻近元件的所述固化材料层。 制造这种装置的方法包括用可固化的硅氧烷组合物涂覆半导体元件的表面，其中分散了平均粒径为0.01至500微米，比重为0.01至0.95的填料，然后固化所述组合物 在与元件相邻的组合物层中的填料经过足够的时间以迁移到远离元件的组合物层中之后。

公开(公告)号：US5989942A

公开(公告)日：1999-11-23

申请号：US237610

申请日：1999-01-25

申请人： Takae Ishikawa ,  Katsutoshi Mine ,  Hiroyosi Naito ,  Kimio Yamakawa

发明人： Takae Ishikawa ,  Katsutoshi Mine ,  Hiroyosi Naito ,  Kimio Yamakawa

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L21/44

CPC分类号： H01L23/24 ,  H01L23/295 ,  H01L23/3121 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/181

摘要： A method for fabricating a semiconductor device, comprising the steps of coating the surface of a semiconductor element with a curable silicone composition comprising a curable silicone polymer and a filler having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95, wherein the filler is selected from the group consisting of powders of organic resins, hollow forms of organic resin powders, hollow inorganic powders, intrinsically electrically conductive fillers, and fillers having a surface that is electrically conductive; allowing sufficient time to elapse for the filler in the part of the curable silicone composition adjoining the element to migrate into the part of the curable silicone composition remote from the element; and curing the curable silicone composition.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：用可固化的聚硅氧烷聚合物和平均粒径为0.01至500微米，比重为0.01至0.95的填料的可固化硅氧烷组合物涂覆半导体元件的表面 其中填料选自有机树脂粉末，中空形式的有机树脂粉末，中空无机粉末，固有导电填料和具有导电表面的填料; 允许足够的时间在邻近元件的可固化硅氧烷组合物的部分中填充物迁移到远离元件的可固化硅氧烷组合物的一部分中; 并固化可固化的有机硅组合物。