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    PATTERN CORRECTING METHOD, MASK FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    4.
    发明申请
    PATTERN CORRECTING METHOD, MASK FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    图案校正方法，掩模形成方法和制造半导体器件的方法

    公开(公告)号：US20120246601A1

    公开(公告)日：2012-09-27

    申请号：US13237435

    申请日：2011-09-20

    申请人： Masanari KAJIWARA ,  Toshiya KOTANI ,  Sachiko KOBAYASHI ,  Hiromitsu MASHITA ,  Fumiharu NAKAJIMA

    发明人： Masanari KAJIWARA ,  Toshiya KOTANI ,  Sachiko KOBAYASHI ,  Hiromitsu MASHITA ,  Fumiharu NAKAJIMA

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70441

    摘要： A pattern correcting method of an embodiment computes a distribution of pattern coverages on a design layout of a circuit pattern in the vicinity of a position that becomes an error pattern in a case where an on-substrate pattern is formed. Then, an area on the design layout in which a difference in the distribution of the pattern coverages becomes small by adding an addition pattern is set as an addition area. Next, addition pattern candidates to be added to the addition area are generated, an addition pattern to be added to the design layout is selected from the candidates on the basis of a predetermined selection criterion, and the addition pattern is added to the addition area.

    摘要翻译： 实施例的图案校正方法在形成有衬底图案的情况下，在成为误差图案的位置附近的电路图案的设计布局上计算图案覆盖率的分布。 然后，通过添加加法图案，设置图案覆盖物的分布差异变小的设计布局上的区域作为附加区域。 接下来，生成要添加到相加区域的添加模式候选，并根据预定的选择标准从候选中选择要添加到设计布局的添加模式，并将添加模式添加到添加区域。

    MASK VERIFICATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER READABLE MEDIUM
    5.
    发明申请
    MASK VERIFICATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER READABLE MEDIUM 审中-公开
    掩模验证方法，制造半导体器件的方法和计算机可读介质

    公开(公告)号：US20100168895A1

    公开(公告)日：2010-07-01

    申请号：US12561626

    申请日：2009-09-17

    申请人： Hiromitsu MASHITA ,  Fumiharu Nakajima ,  Toshiya Kotani ,  Hidefumi Mukai ,  Issui Aiba

    发明人： Hiromitsu MASHITA ,  Fumiharu Nakajima ,  Toshiya Kotani ,  Hidefumi Mukai ,  Issui Aiba

    IPC分类号： G05B13/04 ,  G06F17/50

    CPC分类号： G03F7/705 ,  G03F1/36

    摘要： A mask verification method includes setting optical parameters, verifying whether a pattern, which is obtained when a mask pattern other than a reference pattern of patterns on a mask is transferred on a substrate with use of the set optical parameters, satisfies dimensional specifications, and varying, when the pattern which is obtained when the mask pattern is transferred on the substrate is determined to fail to satisfy the dimensional specifications, the optical parameters at the time of transfer such that the pattern, which is obtained when the reference pattern is transferred on the substrate, satisfies a target dimensional condition, and verifying whether a pattern, which is obtained when the mask pattern other than the reference pattern of the patterns on the mask is transferred on the substrate with use of the varied optical parameters, satisfies the dimensional specifications.

    摘要翻译： 掩模验证方法包括设置光学参数，验证当掩模上的图案的参考图案之外的掩模图案使用所设置的光学参数在基板上转印时获得的图案是否满足尺寸规格，并且变化 当将掩模图案转印到基板上时获得的图案被确定为不能满足尺寸规格，转印时的光学参数使得当在基板上转印参考图案时获得的图案 基板，满足目标尺寸条件，并且验证当使用变化的光学参数在掩模上的图案的参考图案之外的掩模图案被转印到基板上时获得的图案是否满足尺寸规格。

    MASK PATTERN DATA GENERATION METHOD, MASK MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PATTERN DATA GENERATION PROGRAM
    8.
    发明申请
    MASK PATTERN DATA GENERATION METHOD, MASK MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PATTERN DATA GENERATION PROGRAM 有权
    掩模图形数据生成方法，掩模制造方法，半导体器件制造方法和图案数据生成程序

    公开(公告)号：US20090239177A1

    公开(公告)日：2009-09-24

    申请号：US12409068

    申请日：2009-03-23

    申请人： Hiromitsu MASHITA ,  Toshiya Kotani ,  Takashi Obara

    发明人： Hiromitsu MASHITA ,  Toshiya Kotani ,  Takashi Obara

    IPC分类号： G03F7/20 ,  G06F17/50

    CPC分类号： G03F1/36

    摘要： According to an aspect of the present invention, there is provided a mask pattern data generation method including: a first step of obtaining a mask data representing from a design pattern by performing a process simulation with a process parameter having a first value; a second step of obtaining a finished pattern from the mask data by performing the process simulation with the process parameter having a different value; a third step of verifying whether a dimensional error therebetween is within an allowable range; and a fourth step of: if the dimensional error is within the allowable range, determining the mask pattern data; and if the dimensional error is not within the allowable range, repeating the above steps by updating the process parameter until the dimensional error becomes within the allowable range.

    摘要翻译： 根据本发明的一个方面，提供了一种掩模图案数据生成方法，包括：第一步骤，通过利用具有第一值的处理参数进行处理模拟来获得表示设计图案的掩模数据; 通过使用具有不同值的处理参数进行处理模拟从掩模数据获得完成图案的第二步骤; 验证其间的尺寸误差是否在允许范围内的第三步骤; 以及第四步骤：如果所述尺寸误差在所述容许范围内，则确定所述掩模图案数据; 并且如果尺寸误差不在允许范围内，则通过更新处理参数重复上述步骤，直到尺寸误差变得在允许范围内。