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    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    1.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20100190336A1

    公开(公告)日：2010-07-29

    申请号：US12693093

    申请日：2010-01-25

    申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    IPC分类号： H01L21/285

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

    摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

    摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

    Semiconductor device manufacturing method
    2.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US08211796B2

    公开(公告)日：2012-07-03

    申请号：US13282494

    申请日：2011-10-27

    申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

    摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

    摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    3.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20120040526A1

    公开(公告)日：2012-02-16

    申请号：US13282494

    申请日：2011-10-27

    申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

    摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

    摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

    Semiconductor device manufacturing method
    4.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US08062973B2

    公开(公告)日：2011-11-22

    申请号：US12693093

    申请日：2010-01-25

    申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

    摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

    摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08013398B2

    公开(公告)日：2011-09-06

    申请号：US12056909

    申请日：2008-03-27

    申请人： Shinji Mori ,  Tsutomu Sato ,  Koji Matsuo

    发明人： Shinji Mori ,  Tsutomu Sato ,  Koji Matsuo

    IPC分类号： H01L29/78

    CPC分类号： H01L29/772 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.

    摘要翻译： 半导体器件包括具有Si沟道的第一pMISFET区，具有Si沟道的第二pMISFET区和具有Si沟道的nMISFET区。 将第一压缩应变施加到Si沟道的第一SiGe层嵌入并形成在第一pMISFET区域中以夹持其Si沟道，并且将施加与第一压缩应变不同的第二压缩应变的第二SiGe层嵌入并形成 在第二pMISFET区域夹持其Si通道。

    SIMULATION METHOD FOR IMPROVING FREEDOM OF SETTING PARAMETERS RELATING TO INPUT/OUTPUT CHARACTERISTICS OF A MEMORY CHIP
    6.
    发明申请
    SIMULATION METHOD FOR IMPROVING FREEDOM OF SETTING PARAMETERS RELATING TO INPUT/OUTPUT CHARACTERISTICS OF A MEMORY CHIP 审中-公开
    用于改进与存储芯片的输入/输出特性相关的设置参数自由的模拟方法

    公开(公告)号：US20080040081A1

    公开(公告)日：2008-02-14

    申请号：US11676183

    申请日：2007-02-16

    申请人： Yoji NISHIO ,  Seiji Funaba ,  Yurika Aoki ,  Kazuyoshi Shoji ,  Koji Matsuo ,  Mariko Otsuka ,  Ryuichi Ikematsu ,  Sadahiro Nonoyama ,  Kae Fujii

    发明人： Yoji NISHIO ,  Seiji Funaba ,  Yurika Aoki ,  Kazuyoshi Shoji ,  Koji Matsuo ,  Mariko Otsuka ,  Ryuichi Ikematsu ,  Sadahiro Nonoyama ,  Kae Fujii

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5009

    摘要： In the simulation method of the present invention; one parameter is first selected from a plurality of parameters that relate to input/output characteristics. Next, regarding setting lines provided in a file for setting necessary choices from among a plurality of choices for a selected parameter, it is determined to either set choices by means of comment symbols that cause non-execution of the relevant lines, or set choices by means of identification codes, which are identifiers common to chips in which the same choice are to be set. When choices are to be set by means of comment symbols, the comment symbols of the setting lines of the necessary choices among the plurality of choices are deleted to make these setting lines effective. Alternatively, when choices are to be set by means of identification codes, the identification codes included in setting lines are rewritten to information for setting to the necessary choices. Finally, the simulation is executed.

    摘要翻译： 在本发明的模拟方法中， 首先从与输入/输出特性相关的多个参数中选择一个参数。 接下来，关于设置在文件中的设置线，用于从所选择的参数的多个选择中设置必要的选择，确定通过引起不执行相关行的注释符号设置选择，或者通过 识别码的装置，它们是与要设置相同选择的芯片通用的标识符。 当通过注释符号来设置选择时，删除多个选择中必要选择的设置行的注释符号，使得这些设置行成为有效。 或者，当通过识别码设置选择时，将包括在设定线中的识别码重写为用于设置为必要选择的信息。 最后，执行仿真。

    Ink jet recording apparatus
    7.
    发明授权
    Ink jet recording apparatus 失效
    喷墨记录装置

    公开(公告)号：US06736479B2

    公开(公告)日：2004-05-18

    申请号：US10264984

    申请日：2002-10-04

    申请人： Koichi Baba ,  Koji Ikeda ,  Koji Matsuo ,  Masashi Tomita ,  Masaharu Oyama ,  Masaichiro Tatekawa

    发明人： Koichi Baba ,  Koji Ikeda ,  Koji Matsuo ,  Masashi Tomita ,  Masaharu Oyama ,  Masaichiro Tatekawa

    IPC分类号： B41J29393

    CPC分类号： B41J2/04581 ,  B41J2/04588 ,  B41J2002/1425

    摘要： An ink jet recording apparatus includes: a head body provided with a nozzle and a pressure chamber; an actuator including a piezoelectric element and an electrode for applying a voltage across the piezoelectric element; and a driving circuit for supplying a driving signal to the electrode of the actuator. The driving circuit always supplies an auxiliary pulse signal in every printing cycle. When ink is to be discharged, the driving circuit supplies, after the auxiliary pulse signal is supplied, an ink discharge pulse signal for driving the actuator so that the ink is discharged and so that an ink meniscus vibration in the nozzle is resonant with that caused by the auxiliary pulse signal.

    摘要翻译： 一种喷墨记录装置，包括：具有喷嘴和压力室的头体; 包括压电元件的致动器和用于在压电元件两端施加电压的电极; 以及用于向致动器的电极提供驱动信号的驱动电路。 驱动电路在每个打印周期中始终提供辅助脉冲信号。 当墨水被排出时，驱动电路在辅助脉冲信号供应之后提供用于驱动致动器的墨水排出脉冲信号，使得墨水被排出，使得喷嘴中的墨水弯月面振动与引起的墨水共振 通过辅助脉冲信号。

    Synthetic quartz glass and production process
    8.
    发明授权
    Synthetic quartz glass and production process 失效
    合成石英玻璃及生产工艺

    公开(公告)号：US06705115B2

    公开(公告)日：2004-03-16

    申请号：US09747953

    申请日：2000-12-27

    申请人： Koji Matsuo ,  Hisatoshi Otsuka ,  Kazuo Shirota

    发明人： Koji Matsuo ,  Hisatoshi Otsuka ,  Kazuo Shirota

    IPC分类号： C03B1914

    CPC分类号： C03B19/1423 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/23 ,  C03B2207/06 ,  C03B2207/20 ,  C03B2207/36 ,  C03C3/06 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2203/40

    摘要： A process for producing synthetic quartz glass using a burner composed of a plurality of concentric nozzles involves the steps of feeding a silica-forming raw material gas and a fluorine compound gas to a reaction zone from a center nozzle, feeding oxygen gas from a second nozzle outside the center nozzle, and feeding oxygen gas and/or hydrogen gas from a third nozzle. The silica-forming raw material gas is hydrolyzed to form fine particles of silica, which particles are deposited on a rotatable substrate so as to form a porous silica matrix, which is then fused to give the quartz glass. The flow rate of the oxygen gas fed from the second nozzle and the flow rate of the raw material gas are controlled so as to provide a 1.1- to 3.5-fold stoichiometric excess of oxygen. The excess oxygen suppresses Si—Si bond formation in the quartz glass, enabling the production of synthetic quartz glass having a high transmittance in the vacuum ultraviolet region.

    摘要翻译： 使用由多个同心喷嘴构成的燃烧器来生产合成石英玻璃的方法包括以下步骤：将来自中心喷嘴的二氧化硅生成原料气体和氟化合物气体供给到反应区域，从第二喷嘴 在中心喷嘴外部，并且从第三喷嘴供给氧气和/或氢气。 二氧化硅形成原料气体被水解以形成二氧化硅细颗粒，该颗粒沉积在可转动的基底上，以便形成多孔二氧化硅基质，然后熔化以得到石英玻璃。 控制从第二喷嘴供给的氧气的流量和原料气体的流量，从而提供1.1-3.5倍化学计量的过量的氧气。 过量的氧抑制石英玻璃中的Si-Si键的形成，能够在真空紫外线区域中制造具有高透射率的合成石英玻璃。