公开(公告)号：US20100190336A1

公开(公告)日：2010-07-29

申请号：US12693093

申请日：2010-01-25

申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

IPC分类号： H01L21/285

CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

公开(公告)号：US08211796B2

公开(公告)日：2012-07-03

申请号：US13282494

申请日：2011-10-27

申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

公开(公告)号：US20120040526A1

公开(公告)日：2012-02-16

申请号：US13282494

申请日：2011-10-27

申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

IPC分类号： H01L21/3205

CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

公开(公告)号：US08062973B2

公开(公告)日：2011-11-22

申请号：US12693093

申请日：2010-01-25

申请人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

发明人： Takaharu Itani ,  Koji Matsuo ,  Kazuhiko Nakamura

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

摘要翻译： 半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

公开(公告)号：US10273942B2

公开(公告)日：2019-04-30

申请号：US15723179

申请日：2017-10-03

申请人： Kazuhiko Nakamura

发明人： Kazuhiko Nakamura

IPC分类号： F03G7/00 ,  H02K1/17 ,  H02K53/00 ,  F16H49/00 ,  B62M6/00

摘要： A rotation assistance mechanism equipped with: a variable magnetic unit having a pair of magnetic members for which the opposite poles of the members are arranged facing one another; a magnetic drive unit that changes the distance between the pair of magnetic members with a predetermined period by the rotation of a rear wheel; a shield unit having a pair of magnetic surfaces the poles of which are the same as the pair of magnetic members; a shield drive unit that advances the shield unit to between the pair of magnetic members in predetermined cycles when the distance between the pair of magnetic members is contracted, and retracts the shield unit from between the pair of magnetic members in predetermined cycles when the distance between the pair of magnetic members is expanded.

公开(公告)号：US20150222149A1

公开(公告)日：2015-08-06

申请号：US14424325

申请日：2013-08-23

申请人： Kazuhiko Nakamura

发明人： Kazuhiko Nakamura

IPC分类号： H02K1/06

CPC分类号： H02K1/06 ,  F03G7/10 ,  H02K53/00 ,  Y10S74/09

摘要： A rotation assistance mechanism equipped with an attraction unit having a pair of magnetic bodies for which the opposite poles of the bodies are arranged facing one another. A magnetic body driving unit changes the distance between the pair of magnetic bodies with a prescribed period by means of the rotation of a rear wheel. A shielding unit has a pair of magnetic surfaces, the poles of which are the same as the respective opposing surfaces of the pair of magnetic bodies. A shield-driving unit that, in conjunction with the prescribed period, propels the shielding unit into the interval between the pair of magnetic bodies when the distance between the pair of magnetic bodies is reduced, and retracts the shielding unit from the interval between the pair of magnetic bodies when the distance between the pair of magnetic bodies is increased.

摘要翻译： 一种旋转辅助机构，其配备有具有一对磁体的吸引单元，所述一对磁体的主体的相对极彼此相对布置。 磁体驱动单元通过后轮的旋转以规定的时间间隔改变一对磁体之间的距离。 屏蔽单元具有一对磁性表面，其磁极与该对磁体的相应的相对表面相同。 一种屏蔽驱动单元，当所述一对磁体之间的距离减小时，与所述规定期间一起，将所述屏蔽单元推进到所述一对磁体之间的间隔中，并且将所述屏蔽单元从所述一对磁体之间的间隔缩回 当一对磁体之间的距离增加时磁体的位置。

公开(公告)号：US09065319B2

公开(公告)日：2015-06-23

申请号：US13616085

申请日：2012-09-14

申请人： Junya Ono ,  Kazuhiko Nakamura ,  Yasushi Fujimoto ,  Makoto Fujikubo ,  Naoki Kobayashi

发明人： Junya Ono ,  Kazuhiko Nakamura ,  Yasushi Fujimoto ,  Makoto Fujikubo ,  Naoki Kobayashi

IPC分类号： H02K16/02 ,  H02K7/116 ,  H02K21/02 ,  H02K7/14

CPC分类号： H02K21/024 ,  B60L11/18 ,  B60L2200/12 ,  B60L2220/46 ,  H02K7/116 ,  H02K7/12 ,  H02K7/14 ,  H02K16/02 ,  H02K2201/06 ,  H02K2213/09 ,  Y02T10/641 ,  Y02T10/7005

摘要： A rotor placed inside or outside of a stator in the radius direction includes a fixed rotor fixed in a position along a rotation axis of the rotor, and a movable rotor allowed to approach/separate from the fixed rotor and to move in a direction along the rotation axis.

摘要翻译： 设置在半径方向的定子的内部或外部的转子包括固定在沿着转子的旋转轴的位置的固定转子，以及允许与固定转子接近/分离的可动转子，并沿着沿着 旋转轴。

公开(公告)号：US08893644B2

公开(公告)日：2014-11-25

申请号：US11902402

申请日：2007-09-21

申请人： Kazuhiko Nakamura ,  Akira Nonoyama ,  Shigeo Mori ,  Hisashi Kato

发明人： Kazuhiko Nakamura ,  Akira Nonoyama ,  Shigeo Mori ,  Hisashi Kato

IPC分类号： B05B13/02 ,  B05C5/00 ,  B05B1/04 ,  B05B1/00 ,  A62C31/02 ,  B05C5/02 ,  B05B1/20 ,  B05C11/00 ,  B05D1/36 ,  B05D1/30

CPC分类号： B05C5/0254 ,  B05B1/044 ,  B05B1/20 ,  B05D1/305 ,  G03C2001/7433 ,  Y10S118/02 ,  Y10S118/04

摘要： A wide slit nozzle having a slit as a discharge opening. The thickness of a lateral end part is set smaller than the thickness at a lateral center part. The thickness of the lateral center part is fixed. The thickness of the lateral end part changes linearly from opposite lateral ends of the lateral center part to the opposite lateral ends of the slit. Coating material is discharged from the slit while applied with pressure, so that the coating material is coated while expanded wider than the width of the slit. The coating material is discharged at 7 liter per minute, and a coating width of a first example is 100 mm, for example. A thickness increase of the overlapped part is +25% even when a width or an overlapped margin z of the overlapped part is 10 mm or 20 mm.

摘要翻译： 宽狭缝喷嘴，其具有狭缝作为排出口。 横向端部的厚度设定为小于横向中心部的厚度。 横向中心部分的厚度是固定的。 横向端部的厚度从横向中心部分的相对横向端部到缝隙的相对侧端线性地线性变化。 涂敷材料在施加压力的同时从狭缝中排出，使得涂覆材料被涂覆而膨胀比狭缝的宽度更宽。 涂布材料以每分钟7升的速度排出，第一例的涂布宽度例如为100mm。 即使当重叠部分的宽度或重叠边界z为10mm或20mm时，重叠部分的厚度增加为+ 25％。

公开(公告)号：US08857285B2

公开(公告)日：2014-10-14

申请号：US13398307

申请日：2012-02-16

申请人： Yasushi Fujimoto ,  Kinya Mizuno ,  Yoshiaki Tsukada ,  Takashi Ozeki ,  Kazuhiko Nakamura ,  Mitsuo Nakagawa

发明人： Yasushi Fujimoto ,  Kinya Mizuno ,  Yoshiaki Tsukada ,  Takashi Ozeki ,  Kazuhiko Nakamura ,  Mitsuo Nakagawa

IPC分类号： F16H3/08 ,  F16H3/00 ,  B62K25/28 ,  F16H3/16

CPC分类号： F16H3/006 ,  B62K25/283 ,  F16H3/16 ,  Y10T74/19223 ,  Y10T74/19233 ,  Y10T74/19279

摘要： A saddle type vehicle having mounted thereon a power unit is provided with a twin clutch type transmission including a pair of main shafts and a pair of clutches along different axes, to enable a compact layout of axes and a reduction in size of the unit and its surroundings. The axis center (first main axis) of a first main shaft is disposed rearwardly of the axis center (crank axis) of a crankshaft and forwardly of the axis center (counter axis) of a counter shaft, whereas the axis center (second main axis) of a second main shaft is disposed rearwardly of the axis center (counter axis) of the counter shaft and forwardly of the axis center (pivot axis) of a pivot shaft.

摘要翻译： 在其上安装有动力单元的马鞍式车辆设置有双离合器式变速器，其包括沿着不同轴线的一对主轴和一对离合器，以使得轴的紧凑布局和单元的尺寸减小， 周围环境 第一主轴的轴心（第一主轴）设置在曲轴的轴心（曲柄轴）的后方，并且相对轴的中心（相对轴）向前方设置，而轴心（第二主轴） ）设置在相对轴的轴心（相对轴线）的后方，并且位于枢轴的轴心（枢转轴线）的前方。

公开(公告)号：US08518659B2

公开(公告)日：2013-08-27

申请号：US13501147

申请日：2010-10-14

申请人： Norio Mori ,  Kazuhiko Nakamura ,  Katsuaki Suzuki ,  Kenji Tsuchiya ,  Keiko Iwata ,  Hideo Matsuzaki

发明人： Norio Mori ,  Kazuhiko Nakamura ,  Katsuaki Suzuki ,  Kenji Tsuchiya ,  Keiko Iwata ,  Hideo Matsuzaki

IPC分类号： C12Q1/60

CPC分类号： G01N33/92 ,  C12Q1/60 ,  G01N2800/28

摘要： The present invention relates to a method for determining the degree of risk of onset of autism, comprising the step of measuring the triglyceride concentration or the cholesterol concentration in a very low-density lipoprotein fraction of plasma or serum isolated from a subject, or the triglyceride concentration or the cholesterol concentration of plasma or serum. In addition, the present invention provides a kit for determining the degree of risk of onset of autism and a method for screening for a candidate substance for agents for treating autism using a non-human mammal, in which the above described method is utilized.

摘要翻译： 本发明涉及一种用于确定自闭症发作风险程度的方法，包括测量从受试者分离的血浆或血清的非常低密度脂蛋白部分中的甘油三酯浓度或胆固醇浓度的步骤，或甘油三酸酯 浓度或血浆或血清的胆固醇浓度。 此外，本发明提供了一种用于确定自闭症发作风险程度的试剂盒，以及使用使用上述方法的非人哺乳动物治疗自闭症药物的候选物质的筛选方法。