Oxide superconductors and method for producing same
    1.
    发明授权
    Oxide superconductors and method for producing same 失效
    氧化物超导体及其制造方法

    公开(公告)号:US5217945A

    公开(公告)日:1993-06-08

    申请号:US754996

    申请日:1991-09-05

    摘要: The present invention provides an oxide superconductor which has a relatively high transition temperature T.sub.c. This superconductor has the chemical formula (R.sub.1-x Ca.sub.x)(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.3 O.sub.7-z wherein R is at least one rare earth element selected from the group consisting of Tm, Yb and Lu, x is with in the range of 0.1.ltoreq..times.0.5, y is within the range of 0.1.ltoreq. y .ltoreq.0.4 and z is within the range of 0.05 .ltoreq. z .ltoreq.(x/2+0.5). The invention further provides a method for producing the oxide superconductor which comprises firing a composition of the formula (R.sub.1-x Ca.sub.x)(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.3 O.sub.7-z wherein R is at least one rare earth element selected from the group consisting of Tm, Yb and Lu, x is within the range of 0.1 .ltoreq..times..ltoreq.0.5 and y is within the range of 0.1 .ltoreq.y .ltoreq.0.4 at a temperature of from 750.degree. C. to the melting temperature of the composition under an oxygen partial pressure P(O.sub.2) of 0.001 atm .ltoreq.P(O.sub.2) .ltoreq.0.2 atm and then heat treating the composition to adjust the oxygen loss z to 0.05 .ltoreq.z .ltoreq.(x/2+0.5).

    High temperature oxide superconductor
    4.
    发明授权
    High temperature oxide superconductor 失效
    高温氧化物超导体

    公开(公告)号:US5468724A

    公开(公告)日:1995-11-21

    申请号:US68587

    申请日:1993-05-27

    摘要: Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.

    摘要翻译: 本文公开了RBa2Cu4O8型的高温氧化物超导体,其中Ba部分被Sr或Ca取代,或者R和Ba分别被Ca和Sr部分替代,如R(Ba1-ySry)2Cu4O8的化学组成式所示 或R(Ba1-zCaz)2 Cu4O8或(R1-xCax)(Ba1-ySry)2Cu4O8。 它们在高温下表现出超导性。 特别地,最后一个在比前两个更高的温度下表现出超导性。 所有这些都可以用少量的Ba作为有害物质,前两种具有改善的烧结性。 通过在惰性气体和氧气组成的气氛中,在850〜-1100℃的原料混合物进行热静水压处理的方法制造时,得到最好的结果。 该过程允许更广泛地选择Ba原料。

    Optical modulation device
    5.
    发明授权
    Optical modulation device 失效
    光调制装置

    公开(公告)号:US08699830B2

    公开(公告)日:2014-04-15

    申请号:US13075775

    申请日:2011-03-30

    IPC分类号: G02F1/025

    CPC分类号: G02F1/025

    摘要: An optical modulation device of an embodiment includes: a first p-type semiconductor region; a first n-type semiconductor region; a first low-impurity-density semiconductor region formed between the first p-type semiconductor region and the first n-type semiconductor region; a second n-type semiconductor region formed on an outer side of the first p-type semiconductor region via a second low-impurity-density semiconductor region; and a second p-type semiconductor region formed on an outer side of the first n-type semiconductor region via a third low-impurity-density semiconductor region. The carrier density in the first low-impurity-density semiconductor region is changed by current injection. The phase of light propagated through an optical waveguide structure that includes at least part of the first low-impurity-density semiconductor region is modulated.

    摘要翻译: 实施例的光调制装置包括:第一p型半导体区域; 第一n型半导体区域; 形成在第一p型半导体区域和第一n型半导体区域之间的第一低杂质浓度半导体区域; 经由第二低杂质密度半导体区域形成在所述第一p型半导体区域的外侧的第二n型半导体区域; 以及经由第三低杂质密度半导体区域在第一n型半导体区域的外侧形成的第二p型半导体区域。 通过电流注入改变第一低杂质浓度半导体区域中的载流子密度。 调制通过包括至少部分第一低杂质浓度半导体区域的光波导结构传播的光的相位。

    Pneumatic tire
    8.
    发明授权
    Pneumatic tire 有权
    气动轮胎

    公开(公告)号:US08162018B2

    公开(公告)日:2012-04-24

    申请号:US12305095

    申请日:2007-01-26

    IPC分类号: B60C9/18 B60C9/20

    摘要: The present invention provides a pneumatic tire that inhibits any fatigue rupture at an edge portion of a circumferential-direction reinforcing belt layer and also inhibits any separation at an edge portion of crossed belt layers. In the pneumatic tire, at least two crossed belt layers are disposed on the outer circumferential side of a carcass layer in a tread portion. At least one circumferential-direction reinforcing belt layer with a width smaller than those of the crossed belt layers is disposed between the crossed belt layers. Moreover, a stress relaxation layer of a rubber composition having a fixed thickness is disposed between the crossed belt layers while lying adjacent to an edge portion of and outside, in the width directions of, the circumferential-direction reinforcing belt layer.

    摘要翻译: 本发明提供一种充气轮胎,其抑制周向加强带束层的边缘部的任何疲劳断裂,并且还抑制交叉带束层的边缘部分的任何分离。 在充气轮胎中,在胎面部的胎体层的外周侧设置有至少两个交叉带束层。 在交叉的带束层之间设置至少一个宽度小于交叉的带束层的周向加强带束层。 此外,具有固定厚度的橡胶组合物的应力松弛层设置在交叉带束层之间,同时邻近周向加强带束层的宽度方向上的边缘部分和外侧。

    Indole derivative and application thereof
    9.
    发明授权
    Indole derivative and application thereof 有权
    吲哚衍生物及其应用

    公开(公告)号:US08053462B2

    公开(公告)日:2011-11-08

    申请号:US10591899

    申请日:2005-03-04

    CPC分类号: C07D209/30 C07D209/14

    摘要: This invention relates to a compound represented by formula (I) or a salt thereof, and a therapeutic agent for osteoporosis, an osteoblast activator, and an osteoclast suppressor comprising the same: wherein X represents a halogen atom; R1 represents a hydrogen atom, substituted or unsubstituted C1-6 alkyl, substituted or unsubstituted C2-6 alkenyl, substituted or unsubstituted C2-6 alkynyl, a substituted or unsubstituted aromatic group, substituted or unsubstituted aralkyl, substituted or unsubstituted acyl, substituted or unsubstituted arylsulfonyl, substituted or unsubstituted C1-6 alkylsulfonyl, or hydroxyl; R2 represents substituted or unsubstituted C1-21 alkyl; R3, R5 and R6, which may be the same or different, each represent a hydrogen atom or a halogen atom; and R4 represents a hydrogen atom or substituted or unsubstituted C1-6 alkyl.

    摘要翻译: 本发明涉及由式(I)表示的化合物或其盐,以及骨质疏松症治疗剂,成骨细胞激活剂和破骨细胞抑制剂,其中X表示卤素原子; R 1表示氢原子,取代或未取代的C 1-6烷基,取代或未取代的C 2-6烯基,取代或未取代的C 2-6炔基,取代或未取代的芳基,取代或未取代的芳烷基,取代或未取代的酰基,取代或未取代的 取代或未取代的C 1-6烷基磺酰基或羟基; R2代表取代或未取代的C 1-12烷基; R 3,R 5和R 6可以相同或不同,各自表示氢原子或卤素原子; 并且R 4表示氢原子或取代或未取代的C 1-6烷基。

    Photoelectric conversion layer stack type solid-state imaging device
    10.
    发明授权
    Photoelectric conversion layer stack type solid-state imaging device 有权
    光电转换层堆叠式固态成像装置

    公开(公告)号:US07948545B2

    公开(公告)日:2011-05-24

    申请号:US11758701

    申请日:2007-06-06

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    摘要: A solid-state imaging device as defined herein, in which each of the signal reading circuits for reading the detection signals of the first-color pixels includes three transistors which are a reset transistor, a row selection transistor, and an output transistor; and each of the signal reading circuits for reading the detection signals of the second-color pixels and each of the signal reading circuits for reading the detection signals of the third-color pixels include four transistors which are a read transistor, a reset transistor, a row selection transistor, and an output transistor.

    摘要翻译: 这里定义的固态成像器件,其中用于读取第一颜色像素的检测信号的每个信号读取电路包括三个晶体管,它们是复位晶体管,行选择晶体管和输出晶体管; 并且用于读取第二颜色像素的检测信号的每个信号读取电路和用于读取第三颜色像素的检测信号的每个信号读取电路包括四个晶体管,它们是读取晶体管,复位晶体管, 行选择晶体管和输出晶体管。