公开(公告)号：US08389197B2

公开(公告)日：2013-03-05

申请号：US11994602

申请日：2006-06-30

申请人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

发明人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0397 ,  C07C67/343 ,  C07C69/712 ,  C07C2603/74 ,  G03F7/0045

摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

摘要翻译： 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式（I）表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

公开(公告)号：US08206887B2

公开(公告)日：2012-06-26

申请号：US11914451

申请日：2006-04-26

申请人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama

发明人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama

IPC分类号： G03C1/00 ,  G03F7/00

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397

摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.

摘要翻译： 正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物 （A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出 每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

公开(公告)号：US07981588B2

公开(公告)日：2011-07-19

申请号：US11813511

申请日：2006-02-01

申请人： Takako Hirosaki ,  Taku Hirayama ,  Daiju Shiono

发明人： Takako Hirosaki ,  Taku Hirayama ,  Daiju Shiono

IPC分类号： G03C1/00

CPC分类号： G03F7/038

摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.

摘要翻译： 提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。 负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物 （A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

公开(公告)号：US20090269693A1

公开(公告)日：2009-10-29

申请号：US11813511

申请日：2006-02-01

申请人： Takako Hirosaki ,  Taku Hirayama ,  Daiju Shiono

发明人： Takako Hirosaki ,  Taku Hirayama ,  Daiju Shiono

IPC分类号： G03F7/038 ,  G03F7/20

CPC分类号： G03F7/038

摘要： There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.

摘要翻译： 提供了能够以高灵敏度和高分辨率形成抗蚀剂图案的抗蚀剂组合物，以及形成这种抗蚀剂图案的方法。 负性抗蚀剂组合物包括碱溶性基础组分（A），通过暴露产生酸的酸产生剂组分（B）和交联剂组分（C），其中所述碱性组分（A）包含多元酚化合物 （A1），其含有两个或更多个由以下通式（I）表示的酚羟基，分子量为300至2500。

公开(公告)号：US20090117488A1

公开(公告)日：2009-05-07

申请号：US11994602

申请日：2006-06-30

申请人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

发明人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

IPC分类号： G03F7/004 ,  C07C69/76 ,  G03F7/26

CPC分类号： G03F7/0397 ,  C07C67/343 ,  C07C69/712 ,  C07C2603/74 ,  G03F7/0045

摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

摘要翻译： 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式（I）表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

公开(公告)号：US20090092921A1

公开(公告)日：2009-04-09

申请号：US11914451

申请日：2006-04-26

申请人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama

发明人： Takako Hirosaki ,  Daiju Shiono ,  Taku Hirayama

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397

摘要： A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.

摘要翻译： 正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）含有化合物 （A1），其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物（a）中的酚羟基被酸解离的溶解抑制基团保护，化合物（A1）表现出 每分子保护基团数目的标准偏差（sn）小于1，或每分子保护率（mol％）的标准偏差（sp）小于16.7。

公开(公告)号：US07923192B2

公开(公告)日：2011-04-12

申请号：US10590046

申请日：2005-02-08

申请人： Taku Hirayama ,  Daiju Shiono ,  Tasuku Matsumiya ,  Yohei Kinoshita

发明人： Taku Hirayama ,  Daiju Shiono ,  Tasuku Matsumiya ,  Yohei Kinoshita

IPC分类号： G03C1/00 ,  G03F7/00 ,  G03F1/00

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A base material for a pattern-forming material, a positive resist composition, and a method of resist pattern formation that are capable of forming a high resolution pattern with reduced levels of LER. The base material includes a low molecular weight compound (X1), which is formed from a polyhydric phenol compound (x) that contains two or more phenolic hydroxyl groups and satisfies the conditions (1), (2), and (3) described below, wherein either a portion of, or all of, the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups: (1) a molecular weight within a range from 300 to 2,500, (2) a molecular weight dispersity of no more than 1.5, and (3) an ability to form an amorphous film using a spin coating method. Alternatively, the base material includes a protected material (Y1), which is formed from a polyhydric phenol compound (y) that contains two or more phenolic hydroxyl groups and has a molecular weight within a range from 300 to 2,500, in which a predetermined proportion of the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups.

摘要翻译： 用于图案形成材料的基材，正型抗蚀剂组合物和抗蚀剂图案形成方法，其能够形成具有降低的LER水平的高分辨率图案。 基材包含由含有两个以上酚羟基的多元酚化合物（x）形成并满足下述条件（1），（2）和（3）的低分子量化合物（X1） 其中酚羟基的一部分或全部被酸解离，溶解抑制基团保护：（1）分子量在300-2,500范围内，（2）分子量分散度不大于 1.5，和（3）使用旋涂法形成非晶膜的能力。 或者，基材包含由多元酚化合物（y）形成的保护材料（Y1），所述多元酚化合物（y）含有两个或更多个酚羟基并且具有300-2,500的分子量，其中预定比例 的酚羟基被酸解离，溶解抑制基团保护。

公开(公告)号：US20070259273A1

公开(公告)日：2007-11-08

申请号：US11572630

申请日：2005-07-25

申请人： Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

发明人： Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

IPC分类号： G03F1/00

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.

摘要翻译： 含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1） 其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂 （B1）与烷基磺酸根离子作为阴离子。

公开(公告)号：US07960089B2

公开(公告)日：2011-06-14

申请号：US12067255

申请日：2006-09-13

申请人： Daiju Shiono ,  Takahiro Dazai ,  Taku Hirayama ,  Kohei Kasai ,  Hideo Hada

发明人： Daiju Shiono ,  Takahiro Dazai ,  Taku Hirayama ,  Kohei Kasai ,  Hideo Hada

IPC分类号： G03F7/004 ,  C07C39/12

CPC分类号： C07C69/712 ,  C07C59/70 ,  C07C59/72 ,  C07C2601/14 ,  C07C2603/74 ,  G03F7/0392

摘要： A compound of the present invention is a compound represented by a general formula (A-1) [wherein, R′ represents a hydrogen atom or an acid-dissociable, dissolution-inhibiting group, provided that at least one R′ group is an acid-dissociable, dissolution-inhibiting group, R11 to R17 each represent an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each represent an integer of 1 or greater, and k and q each represent an integer of 0 or greater, provided that g+j+k+q is not greater than 5; a represents an integer from 1 to 3; b represents an integer of 1 or greater, and l and m each represent an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represent an integer of 0 or greater, provided that c+n+o is not greater than 4; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].

摘要翻译： 本发明化合物是由通式（A-1）表示的化合物[其中，R'表示氢原子或酸解离的溶解抑制基团，条件是至少一个R'基团为酸 可溶解抑制基团，R 11至R 17各自表示1-10个碳原子的烷基或芳族烃基，其可以包括结构内的杂原子; g和j分别表示1以上的整数，k和q各自表示0以上的整数，条件是g + j + k + q不大于5; a表示1〜3的整数， b表示1或更大的整数，并且l和m各自表示0或更大的整数，条件是b + 1 + m不大于4; c表示1或更大的整数，n和o各自表示0或更大的整数，条件是c + n + o不大于4; A表示由下述通式（Ia）表示的基团，由下述通式（Ib）表示的基团或脂族环基]表示。

公开(公告)号：US07897319B2

公开(公告)日：2011-03-01

申请号：US11572630

申请日：2005-07-25

申请人： Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

发明人： Daiju Shiono ,  Taku Hirayama ,  Hideo Hada

IPC分类号： G03C1/00 ,  G03F1/00

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.

摘要翻译： 含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1） 其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂 （B1）与烷基磺酸根离子作为阴离子。