摘要:
A base material for a pattern-forming material, a positive resist composition, and a method of resist pattern formation that are capable of forming a high resolution pattern with reduced levels of LER. The base material includes a low molecular weight compound (X1), which is formed from a polyhydric phenol compound (x) that contains two or more phenolic hydroxyl groups and satisfies the conditions (1), (2), and (3) described below, wherein either a portion of, or all of, the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups: (1) a molecular weight within a range from 300 to 2,500, (2) a molecular weight dispersity of no more than 1.5, and (3) an ability to form an amorphous film using a spin coating method. Alternatively, the base material includes a protected material (Y1), which is formed from a polyhydric phenol compound (y) that contains two or more phenolic hydroxyl groups and has a molecular weight within a range from 300 to 2,500, in which a predetermined proportion of the phenolic hydroxyl groups are protected with acid dissociable, dissolution inhibiting groups.
摘要:
The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要:
A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要:
There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要:
There are provided a resist composition capable of forming a resist pattern with high sensitivity and high resolution, and a method of forming such a resist pattern. The negative resist composition includes an alkali soluble base component (A), an acid generator component (B) that generates acid by exposure, and a cross-linking agent component (C), wherein the base component (A) includes a polyhydric phenol compound (A1) containing two or more phenolic hydroxyl groups represented by the following general formula (I), with a molecular weight of 300 to 2500.
摘要:
A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要:
A compound of the present invention is a compound represented by a general formula (A-1) [wherein, R′ represents a hydrogen atom or an acid-dissociable, dissolution-inhibiting group, provided that at least one R′ group is an acid-dissociable, dissolution-inhibiting group, R11 to R17 each represent an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each represent an integer of 1 or greater, and k and q each represent an integer of 0 or greater, provided that g+j+k+q is not greater than 5; a represents an integer from 1 to 3; b represents an integer of 1 or greater, and l and m each represent an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represent an integer of 0 or greater, provided that c+n+o is not greater than 4; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
摘要:
A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要:
This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要:
A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.