摘要:
The present invention intends to provide a small-sized impedance matching device with a small variation in quality and large-current tolerance. The above described intention of the present invention is achieved by an impedance matching device, which comprises a wiring portion comprising a conductor pattern for wiring, embedded inside or formed on the surface of first dielectric material, and either one or both of an inductor portion comprising a conductor pattern for inductor, embedded inside or formed on the surface of the first dielectric material, or a capacitor portion comprising at least one pair of conductor patterns for capacitor and second dielectric material with a dielectric constant larger than that of the first dielectric material, existing between the pair of conductor patterns for capacitor wherein the thicknesses of the conductor pattern for wiring and the conductor pattern for inductor are 20 μm or more.
摘要:
A directional coupler includes a dielectric substrate having at least an input terminal and an output terminal on a surface thereof, a main line disposed in the dielectric substrate and extending between the input terminal and the output terminal, a first coupling line for monitoring a level of an input signal which is input through the input terminal, the first coupling line being disposed in the dielectric substrate and having an end electrically connected to a first terminating resistor, and a second coupling line for monitoring a level of a reflected signal which is input through the output terminal, the second coupling line being disposed in the dielectric substrate and having an end electrically connected to a second terminating resistor.
摘要:
A circuit board that can decrease thermal stress acting between a semiconductor element and a board in association with temperature alteration and has high mechanical strength (rigidity) as a whole board (including a multilayer wiring layer) is provided. Ceramic base material having a coefficient of thermal expansion close to that of a semiconductor element and inner layer wiring are integrally sintered, and the circuit board is configured so that fine-lined conductor structure corresponding to a multilayer wiring layer in the inner layer wiring has predetermined width, intralayer interval and interlayer interval. Thereby, thermal stress acting between a semiconductor element and the board when the board is exposed to temperature alteration in a condition where it is joined with the semiconductor element is suppressed, rigidity of the board is maintained, and its reliability against temperature cycle is increased.