摘要:
In a dehumidification/humidification device, a blower and an adsorbent module are contained in a casing. In other embodiment, the blower, the adsorbent module, and a flow passage-changing device are contained in the casing. The adsorbent module includes an adsorbing element formed by carrying an adsorbent on a permeable element and a heater directly disposed on the adsorbing element. The state of the electrification of the heater is changed and an air-blowing direction or a flow passage is changed, whereby a dehumidified air is discharged from a first suction/discharge port (or discharge port), and a humidified air is discharged from a second suction/discharge port (or discharge port).
摘要:
In a dehumidification/humidification device, a blower (2) and an adsorbent module (3) are contained in a casing. In other embodiment, the blower (2), the adsorbent module (3), and a flow passage-changing device (4) are contained in the casing. The adsorbent module (3) comprises an adsorbing element (30) formed by carrying an adsorbent on a permeable element and a heater (31) directly disposed on the adsorbing element. The state of the electrification of the heater (31) is changed and an air-blowing direction or a flow passage is changed, whereby a dehumidified air is discharged from a first suction/discharge port (or discharge port), and a humidified air is discharged from a second suction/discharge port (or discharge port).
摘要:
A dehumidifier/humidifier for vehicle comprising a casing as air flow channel and, accommodated therein in sequence, first air blower (2a), first flow channel switching unit (4a), adsorbent module (3), second flow channel switching unit (4b) and second air blower (2b). The adsorbent module (3) is built by directly disposing first adsorbent element (31) and second adsorbent element (32) on plate surfaces of Peltier element (30), respectively. By reversing the electric current flowing through the Peltier element (30) and switching the flow channel by means of the first flow channel switching unit (4a) and the second flow channel switching unit (4b), dehumidified (or humidified) air is continuously blown out from first blowout hole (11) and humidified (or dehumidified) air is continuously blown out from second blowout hole (12).
摘要:
The present invention relates to a dehumidification and humidification apparatus for vehicles using an adsorbent which is capable of feeding a dehumidified air for preventing fogging of window glass and a humidified air for improvement in comfortableness, and is simplified in construction thereof and reduced in size thereof. The dehumidification and humidification apparatus for vehicles according to the present invention comprises a casing (1), and a blower (2), an adsorbent module (3) and an air passage switching device (4) which are accommodated in the casing. The adsorbent module (3) comprises a Peltier element (30), and a first adsorption component (31) and a second adsorption component (32) which are directly disposed on the respective surfaces of the Peltier element, and the air passage switching device (4) is arranged such that the air passing through the first adsorption component (31) and the air passing through the second adsorption component (32) are each turned toward either a first blowoff port (11) or a second blowoff port (12), and turning directions of the respective airs are switchable therebetween. An electric current flowing through the Peltier element (30) in the adsorbent module (3) is reversed to switch operations of the Peltier element between a heat-absorbing portion and a radiating portion, and switch the turning directions of the respective airs in the air passage switching device (4).
摘要:
The present invention relates to a dehumidification and humidification apparatus for vehicles using an adsorbent which is capable of feeding a dehumidified air for preventing fogging of window glass and a humidified air for improvement in comfortableness, and is simplified in construction thereof and reduced in size thereof. The dehumidification and humidification apparatus for vehicles according to the present invention comprises a casing (1), and a blower (2), an adsorbent module (3) and an air passage switching device (4) which are accommodated in the casing. The adsorbent module (3) comprises a Peltier element (30), and a first adsorption component (31) and a second adsorption component (32) which are directly disposed on the respective surfaces of the Peltier element, and the air passage switching device (4) is arranged such that the air passing through the first adsorption component (31) and the air passing through the second adsorption component (32) are each turned toward either a first blowoff port (11) or a second blowoff port (12), and turning directions of the respective airs are switchable therebetween. An electric current flowing through the Peltier element (30) in the adsorbent module (3) is reversed to switch operations of the Peltier element between a heat-absorbing portion and a radiating portion, and switch the turning directions of the respective airs in the air passage switching device (4).
摘要:
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.
摘要:
A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved.
摘要:
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.
摘要:
A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.
摘要:
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.