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    Resist patterning process and manufacturing photo mask
    1.
    发明申请
    Resist patterning process and manufacturing photo mask 有权
    抗蚀剂图案化工艺和制造光罩

    公开(公告)号：US20100009271A1

    公开(公告)日：2010-01-14

    申请号：US12457544

    申请日：2009-06-15

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

    IPC分类号： G03F1/00 ,  G03F7/20

    CPC分类号： G03F7/0392

    摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

    摘要翻译： 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

    Resist patterning process and manufacturing photo mask
    2.
    发明授权
    Resist patterning process and manufacturing photo mask 有权
    抗蚀剂图案化工艺和制造光罩

    公开(公告)号：US08110335B2

    公开(公告)日：2012-02-07

    申请号：US12457544

    申请日：2009-06-15

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Tamotsu Watanabe ,  Akinobu Tanaka ,  Keiichi Masunaga ,  Ryuji Koitabashi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/0392

    摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

    摘要翻译： 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

    Photomask blank, resist pattern forming process, and photomask preparation process
    4.
    发明授权
    Photomask blank, resist pattern forming process, and photomask preparation process 有权
    光掩模坯料，抗蚀剂图案形成工艺和光掩模制备工艺

    公开(公告)号：US08343694B2

    公开(公告)日：2013-01-01

    申请号：US13207764

    申请日：2011-08-11

    申请人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Takanobu Takeda ,  Keiichi Masunaga ,  Tamotsu Watanabe

    发明人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Takanobu Takeda ,  Keiichi Masunaga ,  Tamotsu Watanabe

    IPC分类号： G03F9/00

    CPC分类号： G03F7/0046 ,  G03F7/0392

    摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

    摘要翻译： 光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。 抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。

    PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS
    5.
    发明申请
    PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS 有权
    光电隔离膜，电阻图案形成工艺和光刻胶制备工艺

    公开(公告)号：US20110294047A1

    公开(公告)日：2011-12-01

    申请号：US13207764

    申请日：2011-08-11

    申请人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Takanobu Takeda ,  Keiichi Masunaga ,  Tamotsu Watanabe

    发明人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Takanobu Takeda ,  Keiichi Masunaga ,  Tamotsu Watanabe

    IPC分类号： G03F7/20 ,  G03F1/00

    CPC分类号： G03F7/0046 ,  G03F7/0392

    摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

    摘要翻译： 光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。 抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。

    Preparation process of chemically amplified resist composition
    7.
    发明授权
    Preparation process of chemically amplified resist composition 有权
    化学增幅抗蚀剂组合物的制备工艺

    公开(公告)号：US08367295B2

    公开(公告)日：2013-02-05

    申请号：US12110651

    申请日：2008-04-28

    申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

    摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

    摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

    PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION
    8.
    发明申请
    PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权
    化学稳定组分的制备方法

    公开(公告)号：US20080274422A1

    公开(公告)日：2008-11-06

    申请号：US12110651

    申请日：2008-04-28

    申请人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    发明人： Keiichi Masunaga ,  Takanobu Takeda ,  Tamotsu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0048 ,  G03F7/0382 ,  G03F7/0397

    摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

    摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

    NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
    9.
    发明申请
    NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    负极组合物和图案过程

    公开(公告)号：US20070111139A1

    公开(公告)日：2007-05-17

    申请号：US11560137

    申请日：2006-11-15

    申请人： Takanobu TAKEDA ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Tamotsu Watanabe

    发明人： Takanobu TAKEDA ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Tamotsu Watanabe

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0382

    摘要： A negative resist composition is provided comprising a polymer comprising recurring units having formula (1), an organic solvent, a crosslinker, and an optional photoacid generator. In formula (1), R1 and R2 are hydrogen or methyl, m is 0 or a positive integer of 1 to 5, p and q are positive numbers. The composition has a high contrast of alkali dissolution rate before and after exposure, high resolution and good etching resistance.

    摘要翻译： 提供了包含含有式（1）的重复单元，有机溶剂，交联剂和任选的光酸产生剂的聚合物的负性抗蚀剂组合物。 在式（1）中，R 1和R 2均为氢或甲基，m为0或1至5的正整数，p和q为正数。 该组合物在曝光前后具有高的对比度的碱溶解速率，高分辨率和良好的抗蚀刻性。