公开(公告)号：US07982789B2

公开(公告)日：2011-07-19

申请号：US12168506

申请日：2008-07-07

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution.

摘要翻译： 由于像素信号不仅在行方向上相加，而且在列方向上被平均化，所以即使像素数增加，也可以充分提高帧速率。 此外，由于相加或平均信号的空间重心在拜耳阵列中以相等的间隔排列，所以可以减少假色（莫尔）的产生并抑制空间分辨率的降低。

公开(公告)号：US20110003426A1

公开(公告)日：2011-01-06

申请号：US12881582

申请日：2010-09-14

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/18

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US07920192B2

公开(公告)日：2011-04-05

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US20090015699A1

公开(公告)日：2009-01-15

申请号：US12168506

申请日：2008-07-07

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution.

摘要翻译： 由于像素信号不仅在行方向上相加，而且在列方向上被平均化，所以即使像素数增加，也可以充分提高帧速率。 此外，由于相加或平均信号的空间重心在拜耳阵列中以相等的间隔排列，所以可以减少假色（莫尔）的产生并抑制空间分辨率的降低。

公开(公告)号：US08411187B2

公开(公告)日：2013-04-02

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N3/14 ,  H01L31/062

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US20110157447A1

公开(公告)日：2011-06-30

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

公开(公告)号：US20080029793A1

公开(公告)日：2008-02-07

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US08173476B2

公开(公告)日：2012-05-08

申请号：US12481008

申请日：2009-06-09

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

IPC分类号： H04N5/335

CPC分类号： H04N5/3598 ,  H04N5/3595 ,  H04N5/374

摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

公开(公告)号：US20090244340A1

公开(公告)日：2009-10-01

申请号：US12481008

申请日：2009-06-09

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

IPC分类号： H04N5/335

CPC分类号： H04N5/3598 ,  H04N5/3595 ,  H04N5/374

摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

摘要翻译： 提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号 线和钳位电路，在第一电压和第二电压下限幅信号线。

公开(公告)号：US08023025B2

公开(公告)日：2011-09-20

申请号：US11772540

申请日：2007-07-02

申请人： Tetsuya Itano ,  Takanori Watanabe

发明人： Tetsuya Itano ,  Takanori Watanabe

IPC分类号： H04N3/14

CPC分类号： H04N5/335

摘要： A photoelectric conversion apparatus includes photoelectric conversion elements configured to convert incident light to electric carriers, amplifier sections configured to read signals based on the electric carriers generated in the photoelectric conversion elements, transfer sections configured to transfer electric carriers in the photoelectric conversion elements to input units of the amplifier sections, and voltage supply sections configured to set potentials of the input units, arranged in a two-dimensional array. The photoelectric conversion apparatus further includes output lines configured to read signals from the amplifier sections and voltage supply lines configured to supply voltages to the voltage supply sections. Out of the output lines and the voltage supply lines, only one output line and one voltage supply line related to a first photoelectric conversion element are disposed between the first photoelectric conversion element and an adjacent second photoelectric conversion element.

摘要翻译： 光电转换装置包括被配置为将入射光转换为电载体的光电转换元件，被配置为基于在光电转换元件中产生的电载流子读取信号的放大器部分，被配置为将光电转换元件中的载流子转移到输入单元 放大器部分的电压供应部分和被配置为设置为二维阵列的输入单元的电位的电压供应部分。 光电转换装置还包括被配置为从放大器部分读取信号的输出线和被配置为向电压供应部分提供电压的电压供应线。 在输出线和电源线之间，在第一光电转换元件和相邻的第二光电转换元件之间仅设置与第一光电转换元件相关的一条输出线和一条电源线。