公开(公告)号：US4740976A

公开(公告)日：1988-04-26

申请号：US592956

申请日：1984-03-23

申请人： Takashi Kajimura ,  Shinichi Nakatuka ,  Naoki Chinone ,  Michiharu Nakamura ,  Yuichi Ono

发明人： Takashi Kajimura ,  Shinichi Nakatuka ,  Naoki Chinone ,  Michiharu Nakamura ,  Yuichi Ono

IPC分类号： H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/3432

摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.

摘要翻译： 半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层 包层 所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层 通过化学气相沉积法嵌入凹槽中的第二覆层。

公开(公告)号：US4602371A

公开(公告)日：1986-07-22

申请号：US571578

申请日：1984-01-17

申请人： Toshihiro Kawano ,  Tsukuru Ohtoshi ,  Naoki Chinone ,  Takashi Kajimura ,  Michiharu Nakamura

发明人： Toshihiro Kawano ,  Tsukuru Ohtoshi ,  Naoki Chinone ,  Takashi Kajimura ,  Michiharu Nakamura

IPC分类号： H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/3213

摘要： A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.

摘要翻译： 半导体激光装置设置有由第一，第二，第三和第四半导体层构成的光限制区域，该第一，第二，第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。 第一和第四半导体层的折射率小于第二和第三半导体层，并且第三半导体层的折射率比第二半导体层大。 另一方面，第二和第四半导体层的禁带宽度大于第三半导体层。 至少第一和第四半导体层的导电类型彼此相反。 除此之外，光限制区域形成为台面条状，并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。 此外，第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。 因此，通过这种结构，通过该半导体激光器件确保了大的输出。

公开(公告)号：US4599729A

公开(公告)日：1986-07-08

申请号：US578530

申请日：1984-02-09

申请人： Yoshimitsu Sasaki ,  Takashi Kajimura ,  Naoki Chinone ,  Michiharu Nakamura

发明人： Yoshimitsu Sasaki ,  Takashi Kajimura ,  Naoki Chinone ,  Michiharu Nakamura

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/028

摘要： In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.

摘要翻译： 在这种类型的半导体激光器件中，其包括在谐振器的两个面的至少一个面上的第一电介质层和第二电介质层的至少一个层叠体，并且其中第一电介质层的折射率低于第一电介质层的折射率 的第二介电层的改进，其中第二介电层由其基本组成元素上含有硅和氢的非晶材料组成。

公开(公告)号：US4759030A

公开(公告)日：1988-07-19

申请号：US870948

申请日：1986-06-05

申请人： Yoshimasa Murayama ,  Yasutsugu Takeda ,  Michiharu Nakamura ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Naoki Chinone

发明人： Yoshimasa Murayama ,  Yasutsugu Takeda ,  Michiharu Nakamura ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Naoki Chinone

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/0425

摘要： A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.

摘要翻译： 具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同，并且由它们的组合形成的电子和空穴或激子可以是 不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。 更确定地，在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。

公开(公告)号：US4337443A

公开(公告)日：1982-06-29

申请号：US124266

申请日：1980-02-25

申请人： Jun-ichi Umeda ,  Toshikazu Shimada ,  Michiharu Nakamura ,  Yoshifumi Katayama ,  Takashi Kajimura ,  Shigeo Yamashita

发明人： Jun-ichi Umeda ,  Toshikazu Shimada ,  Michiharu Nakamura ,  Yoshifumi Katayama ,  Takashi Kajimura ,  Shigeo Yamashita

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/028 ,  H01S5/0282 ,  H01S5/0283

摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.

摘要翻译： 公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。 优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。 可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。 利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

公开(公告)号：US4288757A

公开(公告)日：1981-09-08

申请号：US56360

申请日：1979-07-10

申请人： Takashi Kajimura ,  Motohisa Hirao ,  Michiharu Nakamura ,  Takao Kuroda ,  Shigeo Yamashita ,  Jun-Ichi Umeda

发明人： Takashi Kajimura ,  Motohisa Hirao ,  Michiharu Nakamura ,  Takao Kuroda ,  Shigeo Yamashita ,  Jun-Ichi Umeda

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/22 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/0025 ,  H01S5/22 ,  H01S5/32308 ,  H01S5/32325

摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.

摘要翻译： 在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。 为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层 形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。 设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

公开(公告)号：US4176325A

公开(公告)日：1979-11-27

申请号：US843365

申请日：1977-10-19

申请人： Takashi Kajimura ,  Kazutoshi Saito ,  Noriyuki Shige ,  Michiharu Nakamura ,  Jun-ichi Umeda ,  Masayoshi Kobayashi

发明人： Takashi Kajimura ,  Kazutoshi Saito ,  Noriyuki Shige ,  Michiharu Nakamura ,  Jun-ichi Umeda ,  Masayoshi Kobayashi

IPC分类号： H01S5/227 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2275

摘要： A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3

摘要翻译： 公开了能够发射高度准直的光束，特别是窄的光束发散的半导体激光器件。 通过第一半导体层（折射率：n1，带隙：Eg1，厚度：d），第二半导体层（n2）和第三半导体层（n3）在预定的半导体衬底上形成条纹异质结，以及 异质结被夹在第四半导体层（n4，Eg4）的一部分成埋入结构。 此时，选择各种材料以遵循dλ/λ（其中λ表示半导体激光器的振荡波长），n2，n3

公开(公告)号：US07787824B2

公开(公告)日：2010-08-31

申请号：US11698050

申请日：2007-01-26

申请人： Wladimir Bocquet ,  Michiharu Nakamura

发明人： Wladimir Bocquet ,  Michiharu Nakamura

IPC分类号： H04B7/00 ,  H04K3/00

CPC分类号： H04B7/086 ,  H04B7/0413

摘要： An adaptive array antenna part receiving a plurality of transmitted signals in which sub-carrier signal components of predetermined values is suppressed before transmission in order to distinguish a plurality of transmission antenna, by means of the plurality of transmission antennas; a part calculating weight factors suppressing the sub-carrier signal components set in the predetermined values, among sub-carrier components included in a received signal; and a part applying the weight factors to the adaptive array antenna means and receiving the plurality of transmitted signals with distinguishing the same are provided.

摘要翻译： 一种自适应阵列天线部分，其接收多个发射信号，其中在传输之前抑制了预定值的副载波信号分量，以便通过所述多个发射天线来区分多个发射天线; 在包括在接收信号中的子载波分量中，计算抑制在预定值中设置的副载波信号分量的权重因子的部分; 并且提供将权重因子应用于自适应阵列天线装置并且接收多个具有区别的发射信号的部分。

公开(公告)号：US20100142436A1

公开(公告)日：2010-06-10

申请号：US12649096

申请日：2009-12-29

申请人： Michael John Beems Hart ,  Yuefeng Zhou ,  Dorin Viorel ,  Chenxi Zhu ,  Michiharu Nakamura ,  Masahiro Watanabe ,  Hiroshi Fujita ,  Makoto Yoshida

发明人： Michael John Beems Hart ,  Yuefeng Zhou ,  Dorin Viorel ,  Chenxi Zhu ,  Michiharu Nakamura ,  Masahiro Watanabe ,  Hiroshi Fujita ,  Makoto Yoshida

IPC分类号： H04B7/14

CPC分类号： H04W28/16 ,  H04B7/15507 ,  H04B7/2606 ,  H04L5/0007 ,  H04L5/0032 ,  H04L5/0048 ,  H04L25/0226 ,  H04L27/2655 ,  H04L27/2692 ,  H04W48/08 ,  H04W84/047

摘要： A transmission method for use in a multi-hop wireless communication system is provided. The system includes a source apparatus, a destination apparatus and one or more intermediate apparatuses. The system has access to at least one predetermined transmission introduction sequence and also has access to a time-frequency format for use in assigning available transmission frequency bandwidth during a discrete transmission interval, said format defining a plurality of transmission windows within such an interval. Each window occupies a different part of that interval and has a frequency bandwidth profile within said available transmission frequency bandwidth over its part of that interval. Each said window being assignable for such a transmission interval to at least one of said apparatuses for use in transmission. The method includes, when transmitting a message with a preamble in a particular transmission interval, transmitting the preamble in a first transmission window of that transmission interval. Furthermore, the method includes transmitting the transmission introduction sequence in a second transmission window of that transmission interval other than the first transmission window preferably as control information for use by at least one said intermediate apparatus or the destination apparatus.

摘要翻译： 提供了一种用于多跳无线通信系统的传输方法。 该系统包括源设备，目的地设备和一个或多个中间设备。 该系统可以访问至少一个预定的传输介绍序列，并且还可以访问用于在离散传输间隔期间分配可用传输频率带宽的时间 - 频率格式，所述格式在这样的间隔内定义多个传输窗口。 每个窗口占据该间隔的不同部分，并且在该间隔的部分内在所述可用传输频率带宽内具有频带配置。 每个所述窗口可分配给用于传输的所述设备中的至少一个的这种传输间隔。 该方法包括：在特定发送间隔中发送具有前导码的消息时，在该发送间隔的第一发送窗口中发送前导码。 此外，该方法包括：在第一传输窗口之外的传输间隔的第二传输窗口中优选地传输传输介绍序列作为至少一个所述中间设备或目的设备使用的控制信息。

公开(公告)号：US07660370B2

公开(公告)日：2010-02-09

申请号：US11475960

申请日：2006-06-28

申请人： Atsushi Honda ,  Yuuta Nakaya ,  Michiharu Nakamura

发明人： Atsushi Honda ,  Yuuta Nakaya ,  Michiharu Nakamura

IPC分类号： H04L27/06

CPC分类号： H04L27/265 ,  H04L27/2633

摘要： The present invention provides a wireless terminal apparatus, including a reception unit for receiving a multi-carrier signal generated by applying an N-point (where N is a natural number) inverse fast Fourier transform (IFFT) to a plurality of sub-carriers to which transmission information for a plurality of wireless terminal apparatuses is allocated; a fast Fourier transform unit for extracting a plurality of the sub-carriers from the multi-carrier signal; a thin-out unit, being placed at the front stage of the fast Fourier transform unit, capable of changing, from the N points, a sampling number of the multi-carrier signals which are digitalized; and a judgment unit for discerning, based on sub-carrier allocation information accompanying the multi-carrier signal, whether or not the sub-carrier of another wireless terminal apparatus overlaps with that of the wireless terminal apparatus itself in the case of changing the sampling number from the N points, and determining a sampling number for the thin-out unit.

摘要翻译： 本发明提供一种无线终端装置，包括：接收单元，用于接收通过向多个子载波应用N点（其中N为自然数）的快速傅里叶逆变换（IFFT）而生成的多载波信号， 分配用于多个无线终端装置的发送信息; 快速傅立叶变换单元，用于从多载波信号中提取多个子载波; 放置在快速傅里叶变换单元的前级的薄型单元，能够从N点改变数字化的多载波信号的采样数; 以及判断单元，用于基于伴随多载波信号的子载波分配信息，在改变采样数的情况下，确定另一无线终端装置的副载波与无线终端装置本身的副载波是否重叠 从N个点，并确定薄化单元的采样数。