公开(公告)号：US08728917B2

公开(公告)日：2014-05-20

申请号：US13403346

申请日：2012-02-23

申请人： Takashi Matsumoto ,  Osayuki Akiyama ,  Kenjiro Koizumi

发明人： Takashi Matsumoto ,  Osayuki Akiyama ,  Kenjiro Koizumi

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/162

摘要： A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.

摘要翻译： 一种碳纳米管形成方法，包括提供待加工的靶基板，在所述靶基板的表面上形成催化金属层; 产生催化金属微粒，其表面在温度T1下在催化金属层上通过氧等离子体的作用而被氧化; 以及在高于温度T1的温度T2下，通过氢等离子体在催化金属微粒上的还原催化金属微粒的氧化表面来活化催化金属微粒的氧化表面。 该方法还包括在温度T3下通过热CVD在活化的催化金属微粒上生长碳纳米管。

公开(公告)号：US20120220106A1

公开(公告)日：2012-08-30

申请号：US13403346

申请日：2012-02-23

申请人： Takashi MATSUMOTO ,  Osayuki Akiyama ,  Kenjiro Koizumi

发明人： Takashi MATSUMOTO ,  Osayuki Akiyama ,  Kenjiro Koizumi

IPC分类号： H01L21/20 ,  H01L21/268 ,  B82Y40/00

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/162

摘要： A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.

摘要翻译： 一种碳纳米管形成方法，包括提供待加工的靶基板，在所述靶基板的表面上形成催化金属层; 产生催化金属微粒，其表面在温度T1下在催化金属层上通过氧等离子体的作用而被氧化; 以及在高于温度T1的温度T2下，通过氢等离子体在催化金属微粒上的还原催化金属微粒的氧化表面来活化催化金属微粒的氧化表面。 该方法还包括在温度T3下通过热CVD在活化的催化金属微粒上生长碳纳米管。

公开(公告)号：US08299671B2

公开(公告)日：2012-10-30

申请号：US12663134

申请日：2008-05-29

申请人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai

发明人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai

IPC分类号： H02K7/09 ,  H01L21/00

CPC分类号： H01L21/68792 ,  C23C14/505 ,  H01J37/32761

摘要： A rotary floater (30) for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater (30) is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater (30) is floated and suspended without contact with the inner wall of a processing container (2).

摘要翻译： 用于支撑待加工物体（W）的旋转浮子（30）通过浮动电磁体组件（F）的磁吸引而浮起，旋转浮子（30）通过旋转电磁体组件 R），而其水平位置由定位电磁铁组件（H）的磁吸引力控制。 浮动电磁体组件（F）使得磁吸引力垂直向上作用，使得旋转浮子（30）浮动并悬挂而不与处理容器（2）的内壁接触。

公开(公告)号：US20100164315A1

公开(公告)日：2010-07-01

申请号：US12663134

申请日：2008-05-29

申请人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai

发明人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai

IPC分类号： H02K7/09

CPC分类号： H01L21/68792 ,  C23C14/505 ,  H01J37/32761

摘要： A rotary floater (30) for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater (30) is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater (30) is floated and suspended without contact with the inner wall of a processing container (2).

摘要翻译： 用于支撑待加工物体（W）的旋转浮子（30）通过浮动电磁体组件（F）的磁吸引而浮起，旋转浮子（30）通过旋转电磁体组件 R），而其水平位置由定位电磁铁组件（H）的磁吸引力控制。 浮动电磁体组件（F）使得磁吸引力垂直向上作用，使得旋转浮子（30）浮动并悬挂而不与处理容器（2）的内壁接触。

公开(公告)号：US20120118504A1

公开(公告)日：2012-05-17

申请号：US13386572

申请日：2010-07-21

申请人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai ,  Sumi Tanaka

发明人： Masamichi Nomura ,  Kenjiro Koizumi ,  Shigeru Kasai ,  Sumi Tanaka

IPC分类号： B44C1/22 ,  C23C16/458 ,  C23C16/52 ,  B25B11/00 ,  B24C3/00

CPC分类号： H01L21/68792

摘要： A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus.

摘要翻译： 用于对物体进行处理的处理装置包括：室; 用于在其上端侧支撑物体的旋转浮子; XY旋转吸引体以周向间隔设置在旋转浮子中; 浮动吸引体，设置在所述旋转浮子中以沿周向延伸; 浮动电磁体组，用于通过向浮动吸引体施加垂直向上作用的磁吸引力来调节旋转浮子的倾斜度而浮动旋转浮子; XY旋转电磁体组，用于通过向XY旋转吸引体施加磁力来调节旋转浮子的水平位置来旋转旋转浮筒; 用于将气体供应到所述室中的气体供应源; 用于对物体执行处理的机构; 以及用于控制装置的整个操作的装置控制单元。

公开(公告)号：US07887670B2

公开(公告)日：2011-02-15

申请号：US11984843

申请日：2007-11-21

申请人： Kenjiro Koizumi ,  Naoki Yoshii

发明人： Kenjiro Koizumi ,  Naoki Yoshii

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45574 ,  C23C16/45589

摘要： The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base. A ring-shaped gas guide groove 62 is provided on at least either one of opposing side faces of the gas introducing ring member 54 and gas injection ring member 60, along the circumferential direction, corresponding to a gas introducing port.

摘要翻译： 本发明提供一种气体导入机构和处理对象物的处理装置，其能够在处理空间的整个区域均匀地供给气体，以提高被处理物的表面的处理的均匀性。 处理。 气体引入机构50适于通过使用气体在处理容器4中向待处理对象物W提供处理，该气体引入机构50包括用于将来自处理容器外部的气体引入的气体导入环构件54 如图4所示，可旋转地设置在处理容器4中的顶板48的下方的盘状旋转底座56，以及设置在旋转底座56周围以与气体导入环更靠近并相对的环状气体注入环构件60 在环形气体注入环构件60中设置有气体注入狭缝58，沿着旋转底座的圆周方向形成狭缝58。 在气体导入环构件54和气体注入环构件60的与气体导入口对应的圆周方向的相对侧面的至少任一侧上设置环状导气槽62。

公开(公告)号：US20080178810A1

公开(公告)日：2008-07-31

申请号：US11984843

申请日：2007-11-21

申请人： Kenjiro Koizumi ,  Naoki Yoshii

发明人： Kenjiro Koizumi ,  Naoki Yoshii

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45589

摘要： The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base. A ring-shaped gas guide groove 62 is provided on at least either one of opposing side faces of the gas introducing ring member 54 and gas injection ring member 60, along the circumferential direction, corresponding to a gas introducing port.

摘要翻译： 本发明提供一种气体导入机构和处理对象物的处理装置，其能够在处理空间的整个区域均匀地供给气体，以提高被处理物的表面的处理的均匀性。 处理。 气体引入机构50适于通过使用气体在处理容器4中向待处理对象物W提供处理，该气体引入机构50包括用于将来自处理容器外部的气体引入的气体导入环构件54 如图4所示，可旋转地设置在处理容器4中的顶板48的下方的盘状旋转底座56，以及设置在旋转底座56周围以与气体导入环更靠近并相对的环状气体注入环构件60 在环形气体注入环构件60中设置有气体注入狭缝58，沿着旋转底座的圆周方向形成狭缝58。 在气体导入环构件54和气体注入环构件60的与气体导入口对应的圆周方向的相对侧面的至少任一侧上设置环状导气槽62。