Organic transistor and active matrix display
    5.
    发明授权
    Organic transistor and active matrix display 有权
    有机晶体管和有源矩阵显示

    公开(公告)号:US07999253B2

    公开(公告)日:2011-08-16

    申请号:US12067657

    申请日:2007-07-19

    IPC分类号: H01L51/00

    摘要: An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

    摘要翻译: 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极,栅极绝缘膜,源电极,漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极,栅极绝缘膜,源电极,漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

    ORGANIC TRANSISTOR AND ACTIVE MATRIX DISPLAY
    6.
    发明申请
    ORGANIC TRANSISTOR AND ACTIVE MATRIX DISPLAY 有权
    有机晶体管和有源矩阵显示

    公开(公告)号:US20090272966A1

    公开(公告)日:2009-11-05

    申请号:US12067657

    申请日:2007-07-19

    IPC分类号: H01L51/52 H01L51/10

    摘要: An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

    摘要翻译: 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极,栅极绝缘膜,源电极,漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极,栅极绝缘膜,源电极,漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display
    7.
    发明授权
    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display 有权
    有机晶体管有源基板,其制造方法和电泳显示器

    公开(公告)号:US08071432B2

    公开(公告)日:2011-12-06

    申请号:US11517737

    申请日:2006-09-07

    IPC分类号: H01L21/00 H01L21/84

    摘要: A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

    摘要翻译: 公开了制造有机晶体管有源衬底的方法。 有机晶体管有源基板包括其中第一电极形成在基板上的有机晶体管,在第一电极上形成第一绝缘膜,在第一绝缘膜上形成一对第二电极,并且在第一绝缘膜上形成有源层, 在一对第二电极上形成有机半导体材料。 有机晶体管与第二绝缘膜层压,并且第二绝缘膜与通过第二绝缘膜提供的通孔电耦合到第二电极之一的第三电极层叠。 第一电极通过喷墨喷射形成; 第一绝缘膜通过涂布形成; 该一对第二电极通过喷墨喷射形成; 活性层通过喷墨喷射形成; 第二绝缘膜通过丝网印刷形成; 并且第三电极通过丝网印刷形成。

    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display
    8.
    发明申请
    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display 有权
    有机晶体管有源基板,其制造方法和电泳显示器

    公开(公告)号:US20070054212A1

    公开(公告)日:2007-03-08

    申请号:US11517737

    申请日:2006-09-07

    IPC分类号: G03G5/00

    摘要: A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

    摘要翻译: 公开了制造有机晶体管有源衬底的方法。 有机晶体管有源基板包括其中第一电极形成在基板上的有机晶体管,在第一电极上形成第一绝缘膜,在第一绝缘膜上形成一对第二电极,并且在第一绝缘膜上形成有源层, 在一对第二电极上形成有机半导体材料。 有机晶体管与第二绝缘膜层压,并且第二绝缘膜与通过第二绝缘膜提供的通孔电耦合到第二电极之一的第三电极层叠。 第一电极通过喷墨喷射形成; 第一绝缘膜通过涂布形成; 该一对第二电极通过喷墨喷射形成; 活性层通过喷墨喷射形成; 第二绝缘膜通过丝网印刷形成; 并且第三电极通过丝网印刷形成。

    Electromechanical transducer element, droplet discharge head, and droplet discharge device
    9.
    发明授权
    Electromechanical transducer element, droplet discharge head, and droplet discharge device 有权
    机电换能器元件,液滴喷头和液滴喷射装置

    公开(公告)号:US08727505B2

    公开(公告)日:2014-05-20

    申请号:US13529304

    申请日:2012-06-21

    IPC分类号: B41J2/045

    摘要: Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ΔPb=Pb(avg)−Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.

    摘要翻译: 公开了一种机电换能器元件,其包括由包括铅(Pb),锆(Zr)和钛(Ti)的复合氧化物(PZT)形成的机电换能器膜。 机电换能器膜通过层压多个PZT薄膜而形成,直到所形成的机电换能器膜的厚度成为预定厚度。 当在所形成的机电换能器膜中包含的平均Pb的原子重量比(Pb /(Zr + Ti))由Pb(avg)和Pb中的任何一种的原子量(Pb /(Zr + Ti)) 多个PZT薄膜的层叠界面由Pb(界面)表示,Pb(avg)大于或等于100原子百分比(at%)和小于或等于110原子百分比(at%),以及 层压界面中Pb的波动比&Dgr; Pb = Pb(avg)-Pb(界面)小于或等于20%。