Image processing method and apparatus
    1.
    发明授权
    Image processing method and apparatus 失效
    图像处理方法和装置

    公开(公告)号:US5697712A

    公开(公告)日:1997-12-16

    申请号:US480937

    申请日:1995-06-07

    摘要: A method and apparatus proecsses a dot image formed of a plurality dots, each dot having a density level. In the method and appratus, a dot pattern is extracted from the dot image, which dot pattern being formed of an observation dot and dots surrounding the observation dot, it is tdetermining, based on comparison between the extracted dot pattern and predetermined reference patterns, whether or not the observation dot in the dot pattern is either a dropout dot or a projection dot, a density level of the observation dot is changed to a first density level corresponding to the dropout dot when it is determined that the observation dot is the dropout dot, and a density level of the observation dot is changed to a second density level corresponding to the projection dot when it is determined that the observation dot is the projection dot.

    摘要翻译: 一种方法和装置构成由多个点形成的点图像,每个点具有密度水平。 在方法和应用中,从点图像提取点图案,该点图案由观察点形成,围绕观察点的点形成,基于提取的点图案与预定的参考图案之间的比较来确定是否 或者点图案中的观察点不是滴点或投影点,则当确定观察点是滴点时,观察点的浓度水平变为对应于滴点的第一浓度水平 并且当确定观察点是投影点时,观察点的浓度水平被改变为对应于投影点的第二浓度水平。

    Image drawing with improved area ratio approximation process
    2.
    发明授权
    Image drawing with improved area ratio approximation process 失效
    具有改进的面积比近似过程的图像绘图

    公开(公告)号:US5404431A

    公开(公告)日:1995-04-04

    申请号:US978513

    申请日:1992-11-18

    CPC分类号: G06T11/203

    摘要: A cross point detection part detects respective positions of cross points of an image's edge crossing sides of respective pixels. An approximated area ratio determination part determines respective approximated area ratios obtained as a result of approximating respective area ratios of areas occupied by the image in the respective pixels by using the positions of the cross points. A darkness determination part determines respective darknesses of the respective pixels in accordance with the approximated area ratios.

    摘要翻译: 交叉点检测部检测各像素的边缘相交边的交叉点的相应位置。 近似面积比确定部分通过使用交叉点的位置来确定作为近似各个像素中的图像所占据的面积的各个面积比的结果而获得的各个近似面积比。 黑暗决定部根据近似面积比确定各像素的各自的黑度。

    Graphics processing apparatus for smoothing edges of images
    3.
    发明授权
    Graphics processing apparatus for smoothing edges of images 失效
    用于平滑图像边缘的图形处理装置

    公开(公告)号:US5357583A

    公开(公告)日:1994-10-18

    申请号:US914746

    申请日:1992-07-16

    IPC分类号: G06K15/12 H04N1/409 G06K9/00

    CPC分类号: H04N1/4092 G06K15/1223

    摘要: A graphics processing apparatus includes a first detection part for detecting, with respect to each pixel of an image, whether or not an edge of the image starts on a scanline, and for setting a control data depending on whether or not the edge starts on the scanline, a second detection part for detecting a duration of beam power modulation corresponding to one or plural edge pixels being intersected by a line defined in the image, and for setting a duration data, a third detection part for detecting an outermost edge pixel in the edge pixels, a part for generating a beam power data indicating an intensity level of light beam power corresponding to the outermost edge pixel, an output part for outputting the image by means of a printer having a light source for emitting a light beam, and a control means for continuously modulating light beam power of the light source from the intensity level to a predetermined level with respect to the edge pixels, so that an image with smooth edges is generated by modulating the light beam power of the light source in accordance with the control data and the duration data.

    摘要翻译: 图形处理装置包括第一检测部分,用于相对于图像的每个像素检测图像的边缘是否在扫描线上开始,并且根据边缘是否开始在扫描线上开始来设置控制数据 扫描线,第二检测部分,用于检测对应于由图像中定义的线相交的一个或多个边缘像素的波束功率调制的持续时间,以及用于设置持续时间数据;第三检测部分,用于检测第一检测部分中的最外边缘像素 边缘像素,用于产生指示与最外边缘像素对应的光束功率的强度水平的光束功率数据的部分,用于通过具有用于发射光束的光源的打印机输出图像的输出部分,以及 用于将光源的光束功率从强度水平相对于边缘像素连续调制到预定水平的控制装置,使得具有平滑边缘的图像是 通过根据控制数据和持续时间数据调制光源的光束功率而产生。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    4.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20090215247A1

    公开(公告)日:2009-08-27

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在扫描装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    5.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照,防止铝腐蚀

    公开(公告)号:US07998793B2

    公开(公告)日:2011-08-16

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/00

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    6.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20080138962A1

    公开(公告)日:2008-06-12

    申请号:US11632993

    申请日:2004-07-22

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 通过照明装置(7a)和(7b)的晶片。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Containment vessel and nuclear power plant

    公开(公告)号:US09818495B2

    公开(公告)日:2017-11-14

    申请号:US13988966

    申请日:2011-09-14

    申请人: Takashi Sato

    发明人: Takashi Sato

    摘要: A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit

    公开(公告)号:US09653994B2

    公开(公告)日:2017-05-16

    申请号:US13215035

    申请日:2011-08-22

    IPC分类号: G01R31/00 H02M3/158 H02M1/36

    CPC分类号: H02M3/158 H02M1/36

    摘要: A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.

    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof
    10.
    发明授权
    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof 有权
    燃料电池用电极催化剂的制造方法,燃料电池用电极催化剂及其用途

    公开(公告)号:US09350025B2

    公开(公告)日:2016-05-24

    申请号:US13979305

    申请日:2011-08-09

    摘要: A method for producing a fuel cell electrode catalyst including a metal element selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium and having high catalytic activity through heat treatment at comparatively low temperature. The method including: a step (1) of mixing at least a certain metal compound (1), a nitrogen-containing organic compound (2), and a solvent to obtain a catalyst precursor solution, a step (2) of removing the solvent from the catalyst precursor solution, and a step (3) of heat-treating a solid residue, obtained in the step (2), at a temperature of 500 to 1100° C. to obtain an electrode catalyst; a portion or the entirety of the metal compound (1) being a compound containing, as the metal element, a metal element M1 selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium.

    摘要翻译: 一种生产包括选自铝,铬,锰,铁,钴,镍,铜,锶,钇,锡,钨和铈的金属元素的燃料电池电极催化剂的方法,并且通过相对较低的热处理具有高催化活性 温度。 该方法包括:将至少一种金属化合物(1),含氮有机化合物(2)和溶剂混合以获得催化剂前体溶液的步骤(1),除去溶剂的步骤(2) 和催化剂前体溶液的步骤(3)和步骤(2)中获得的固体残渣热处理步骤(3),在500〜1100℃的温度下进行,得到电极催化剂; 金属化合物(1)的一部分或全部是含有选自铝,铬,锰,铁,钴,镍,铜,锶,钇,锡,钨中的金属元素M1作为金属元素的化合物, 和铈。