利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.016 秒)

    Process for producing silicon single crystal layer and silicon single crystal layer
    2.
    发明授权
    Process for producing silicon single crystal layer and silicon single crystal layer 有权
    硅单晶层和硅单晶层的制造方法

    公开(公告)号：US07229496B2

    公开(公告)日：2007-06-12

    申请号：US10506534

    申请日：2003-03-05

    申请人： Takashi Shibayama ,  Yoshio Murakami ,  Takayuki Shingyoji

    发明人： Takashi Shibayama ,  Yoshio Murakami ,  Takayuki Shingyoji

    IPC分类号： C30B15/20

    CPC分类号： C30B29/06 ,  C30B33/00

    摘要： A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

    摘要翻译： 在由氢气或惰性气体形成的气氛气体或这些气体的混合气体中，在600℃的温度下对硅晶片W（硅单晶层）进行热处理操作 到950℃（这里温度不应该大于950℃）。 通过这样做，提高了硅单晶层的表面质量。

    Silicon wafer production process and silicon wafer
    4.
    发明授权
    Silicon wafer production process and silicon wafer 有权
    硅晶片生产工艺和硅片

    公开(公告)号：US07067005B2

    公开(公告)日：2006-06-27

    申请号：US10912051

    申请日：2004-08-06

    申请人： Takashi Shibayama ,  Yoshio Murakami ,  Takayuki Shingyoji

    发明人： Takashi Shibayama ,  Yoshio Murakami ,  Takayuki Shingyoji

    IPC分类号： C30B25/12 ,  C30B25/14

    CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/00 ,  H01L21/28167

    摘要： This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

    摘要翻译： 该硅晶片制造方法具有从完全区域的硅单晶锭切割硅晶片的步骤，该完美区域包括没有间隙硅型点缺陷聚集体的完美区域P和空位型缺陷聚集体和/ 或发生环状氧化诱发的堆垛层错的区域R，以及在氢气氛，氩气氛或含有其混合气体的气氛中对硅晶片进行快速热退火的步骤。