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1.发明授权公开(公告)号：US07229496B2
公开(公告)日：2007-06-12
申请号：US10506534
申请日：2003-03-05
IPC分类号： C30B15/20
摘要： A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.
摘要翻译： 在由氢气或惰性气体形成的气氛气体或这些气体的混合气体中，在600℃的温度下对硅晶片W（硅单晶层）进行热处理操作 到950℃（这里温度不应该大于950℃）。 通过这样做，提高了硅单晶层的表面质量。
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公开(公告)号：US20060027159A1
公开(公告)日：2006-02-09
申请号：US10912051
申请日：2004-08-06
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00 , H01L21/28167
摘要： This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
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3.发明申请公开(公告)号：US20050153550A1
公开(公告)日：2005-07-14
申请号：US10506534
申请日：2003-03-05
IPC分类号： H01L21/324 , C30B33/00 , H01L21/322 , H01L21/302 , H01L21/461
摘要： A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.
摘要翻译： 在由氢气或惰性气体形成的气氛气体或这些气体的混合气体中，在600℃的温度下对硅晶片W（硅单晶层）进行热处理操作 到950℃（这里温度不应该大于950℃）。 通过这样做，提高了硅单晶层的表面质量。
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公开(公告)号：US07067005B2
公开(公告)日：2006-06-27
申请号：US10912051
申请日：2004-08-06
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00 , H01L21/28167
摘要： This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
摘要翻译： 该硅晶片制造方法具有从完全区域的硅单晶锭切割硅晶片的步骤，该完美区域包括没有间隙硅型点缺陷聚集体的完美区域P和空位型缺陷聚集体和/ 或发生环状氧化诱发的堆垛层错的区域R，以及在氢气氛，氩气氛或含有其混合气体的气氛中对硅晶片进行快速热退火的步骤。
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公开(公告)号：US20070238312A1
公开(公告)日：2007-10-11
申请号：US11784999
申请日：2007-04-09
申请人： Yoshio Murakami , Bong-Gyun Ko
发明人： Yoshio Murakami , Bong-Gyun Ko
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/26533 , H01L21/26593 , H01L21/76243
摘要： A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015−1017/cm2 before or after the step of the oxygen ion implantation.
摘要翻译： 通过注入氧离子来制造SIMOX晶片，其中以10×10 17 / 10cm 2 / cm 2以上的剂量注入氢离子 >在氧离子注入步骤之前或之后。
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公开(公告)号：US07195863B2
公开(公告)日：2007-03-27
申请号：US10311787
申请日：2001-06-14
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/0382 , G03F7/0392 , G03F7/11 , G03F7/168 , H01L21/0274
摘要： A composition for reducing development defects comprising an acidic composition containing, for example, a surfactant applied onto a chemically amplified photoresist coating formed on a substrate having a diameter of 8 inches or more. By this process, the surface of the resist is rendered hydrophilic and the formation of slightly soluble layer in a developer on the surface of the resist is prevented. In addition, by proper diffusion amount of acid from the composition for reducing development defects, the amount of reduction in thickness of the chemically amplified photoresist coating after development is increased by 10 Å to 500 Å in comparison with the case of not applying the composition for reducing development defects to form a resist pattern not having a deteriorated pattern profile such as T-top or round top.
摘要翻译： 一种用于减少显影缺陷的组合物，其包含含有例如施加到直径为8英寸或更大的基底上形成的化学放大光致抗蚀剂涂层上的表面活性剂的酸性组合物。 通过该工艺，抗蚀剂的表面变得亲水，并且防止在抗蚀剂表面上的显影剂中形成微溶层。 此外，通过适当扩散量的用于减少显影缺陷的组合物的酸，与未将组合物不相适应的情况相比，显影后化学放大光致抗蚀剂涂层的厚度减少量增加了10埃至500埃 减少显影缺陷以形成不具有劣化图案轮廓的抗蚀剂图案，例如T顶或圆顶。
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公开(公告)号：US5789821A
公开(公告)日：1998-08-04
申请号：US788236
申请日：1997-01-24
申请人： Tsutomu Shiga , Nobuyuki Hayashi , Masanori Ohmi , Masami Niimi , Kazuhiro Yamaguchi , Masao Saito , Yoshio Murakami , Takeshi Araki
发明人： Tsutomu Shiga , Nobuyuki Hayashi , Masanori Ohmi , Masami Niimi , Kazuhiro Yamaguchi , Masao Saito , Yoshio Murakami , Takeshi Araki
CPC分类号： F02N11/00 , F02N15/066 , F02N15/067
摘要： A starter which reduces the number of parts for a pinion rotation regulation and provides an accurate magnet switch operation. A concave portion is formed on the bottom side of a plunger to store a spherical body set on the rear end of a cord-shaped member, e.g., wire. A male screw and a fixing are used so that the length of the cord-shaped member is adjusted thereby. The length of the string-shaped member is adjusted so that the claw of the pinion rotation regulating member fits into the notch on the outer circumference of a pinion gear. Furthermore, the claw is fit into the notch via the wire when the plunger moves. The cord-shaped member may be replaced by a rod member disposed radially inside or outside the yoke.
摘要翻译： 一种起动器，可减少小齿轮旋转调节的零件数量，并提供精确的磁铁开关操作。 在柱塞的底侧上形成凹部以存储设置在诸如线材的绳状构件的后端上的球体。 使用外螺纹和固定，从而调节绳状构件的长度。 调整弦状构件的长度，使得小齿轮旋转限制构件的爪装配到小齿轮的外周上的凹口中。 此外，当柱塞移动时，爪通过导线配合到凹口中。 帘线状构件可以由放置在轭的径向内侧的杆构件代替。
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公开(公告)号：US5603788A
公开(公告)日：1997-02-18
申请号：US457013
申请日：1995-06-01
申请人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
发明人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
CPC分类号： H05H7/14
摘要： A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.
摘要翻译： 提供一种真空容器，其中包括环形壁部分（1）和板壁部分（2）的容器壁的大部分由诸如氮化硅的陶瓷材料形成。 为了将多个壁构件结合在一起，在其上制备具有不大于1μm的表面平坦度的接合面，然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面 并进行加热。 因为从陶瓷容器的壁产生气体，例如氢气，所以可以在真空容器的内部产生极高的真空度并维持真空。 此外，由于真空容器的壁相对于磁场和电场具有高磁导率，所以真空容器可以用作粒子加速器中的容器，其允许通过以下方式对带电粒子进行高精度控制： 电磁场。
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公开(公告)号：US5494549A
公开(公告)日：1996-02-27
申请号：US131960
申请日：1993-10-08
申请人： Tetsuro Oki , Yoshio Murakami , Tsuyoshi Miyata
发明人： Tetsuro Oki , Yoshio Murakami , Tsuyoshi Miyata
CPC分类号： B28D5/0082 , Y10T156/1082
摘要： In a dicing method, a resin adhesive tape is stuck to one surface of a wafer mount frame, then a rubber plate is stuck to the tape from the open side of the frame. With the rubber plate stretched, an adhesive is sprayed over the rubber plate, whereupon a wafer is stuck to the rubber plate. A weight is placed on the rubber plate to extend it further, thus fixing the wafer to the frame. The thus mounted wafer is diced. Alternatively, a resin adhesive tape is stuck to one surface of the frame, then a thick adhesive rubber plate is stuck to the tape from the open side of the frame, whereupon a wafer with hard wax printed using a screen mask is stuck to the rubber plate. The thus mounted wafer is diced by cutting into it deeply. The cut wafer is soaked in a solvent for separation from the rubber plate. As a further alternative, screen mask printing is carried out on a wafer, and wax is coated over the wafer. A resin adhesive tape is stuck to one surface of a wafer mount frame, and then a thick adhesive rubber plate is stuck to the tape from the open side of the wafer mount frame, whereupon the wax-side surface of the wafer is stuck to the rubber plate. The mounted wafer is diced. The wafer is soaked in a solvent for separation of chips from the rubber plate.
摘要翻译： 在切割方法中，将树脂粘合带粘贴在晶片安装框架的一个表面上，然后橡胶板从框架的开放侧粘附到带子上。 在橡胶板拉伸的同时，将粘合剂喷在橡胶板上，然后将晶片粘在橡胶板上。 将重物放置在橡胶板上以进一步延伸，从而将晶片固定到框架上。 将如此安装的晶片切割。 或者，将树脂粘合带粘贴在框架的一个表面上，然后将厚的粘合橡胶板从框架的开口侧粘附到带上，由此将使用筛网掩模印刷的具有硬蜡的晶片粘附到橡胶 盘子。 将这样安装的晶片深入切入。 将切割的晶片浸入溶剂中以从橡胶板分离。 作为另一替代方案，在晶片上进行屏幕掩模印刷，并且将蜡涂覆在晶片上。 将树脂粘合带粘贴在晶片安装框架的一个表面上，然后将厚的粘合橡胶板从晶片安装框架的开放侧粘附到带上，由此将晶片的蜡侧表面粘附到 橡胶板。 安装的晶片被切割。 将晶片浸泡在溶剂中以从橡胶板分离碎片。
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公开(公告)号：US4152096A
公开(公告)日：1979-05-01
申请号：US845962
申请日：1977-10-27
申请人： Yoshio Murakami , Takezo Nakazawa
发明人： Yoshio Murakami , Takezo Nakazawa
CPC分类号： F04D7/04 , F04D29/086 , F04D29/20 , F04D29/4286 , F04D29/628 , Y10T403/213 , Y10T403/7028 , Y10T403/7058
摘要： An impeller type pump has a pump body consisting of a front casing and a back casing. Each of the casings comprises a ceramic main portion and a protection member covering the main portion. The protection members of both the main portions are interconnected with each other at their confronting marginal portions through a continuous packing. Those confronting marginal portions of both the main portions which are adjacent to a pump chamber defined by inner surfaces of both the main portions are provided each with a plurality of concentrical rims loosely interdigitated to form a labyrinthine narrow passage restricting the flow of waste water therebetween, resulting in reduction of wear of the packing.
摘要翻译： 叶轮型泵具有由前壳体和后壳体组成的泵体。 每个壳体包括陶瓷主体部分和覆盖主要部分的保护部件。 两个主要部分的保护构件通过连续的包装彼此在相对的边缘部分处相互连接。 与两个主要部分的内表面相邻的两个主要部分相邻的两个主要部分的边缘部分分别设置有多个同心的轮辋，它们松散地相互交错，以形成限制其间的废水流动的迷宫式狭窄通道。 导致包装的磨损减少。
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