公开(公告)号：US07569875B2

公开(公告)日：2009-08-04

申请号：US11717790

申请日：2007-03-14

申请人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

发明人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

IPC分类号： H01L29/80

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66136 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/868

摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

摘要翻译： 一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。 该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。 栅电极是沟槽栅极。 发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。 绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

公开(公告)号：US20070221950A1

公开(公告)日：2007-09-27

申请号：US11717790

申请日：2007-03-14

申请人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

发明人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

IPC分类号： H01L29/74

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66136 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/868

摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

摘要翻译： 一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。 该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。 栅电极是沟槽栅极。 发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。 绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

公开(公告)号：US20060054883A1

公开(公告)日：2006-03-16

申请号：US11092184

申请日：2005-03-29

申请人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

发明人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

IPC分类号： H01L29/08

CPC分类号： H01L51/0071 ,  H01L51/0052 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

摘要翻译： 本发明提供一种包含具有良好的载流子传输性的有机半导体层的有机半导体器件，其中对有机半导体层的载流子注入容易。 上述问题通过包括第一电极和彼此面对的第二电极的有机半导体器件和设置在第一电极和第二电极之间的有机半导体层来解决，其中在其间形成有载流子注入促进层 有机半导体层和第一电极和第二电极的至少一个电极。

公开(公告)号：US07256064B2

公开(公告)日：2007-08-14

申请号：US11092184

申请日：2005-03-29

申请人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

发明人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

IPC分类号： H01L21/00

CPC分类号： H01L51/0071 ,  H01L51/0052 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

摘要翻译： 本发明提供一种包含具有良好的载流子传输性的有机半导体层的有机半导体器件，其中对有机半导体层的载流子注入容易。 上述问题通过包括第一电极和彼此面对的第二电极的有机半导体器件和设置在第一电极和第二电极之间的有机半导体层来解决，其中在其间形成有载流子注入促进层 有机半导体层和第一电极和第二电极的至少一个电极。