公开(公告)号：US4303464A

公开(公告)日：1981-12-01

申请号：US130407

申请日：1980-03-14

申请人： Takashi Suzuki ,  Shin-ichi Akai ,  Hideki Mori ,  Katsunosuke Aoyagi ,  Takashi Shimoda ,  Kazuhisa Matsumoto ,  Masami Sasaki

发明人： Takashi Suzuki ,  Shin-ichi Akai ,  Hideki Mori ,  Katsunosuke Aoyagi ,  Takashi Shimoda ,  Kazuhisa Matsumoto ,  Masami Sasaki

IPC分类号： C30B15/04 ,  C30B15/00 ,  C30B27/02 ,  C30B29/44 ,  H01L21/18 ,  H01L21/208

CPC分类号： C30B27/02 ,  C30B15/00 ,  C30B29/44

摘要： Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

摘要翻译： 具有低缺陷密度的磷化镓单晶，其通过液体封装Czochralski拉制法制造，其特征在于它们掺杂或未掺杂至少一种在磷化镓中具有电活性并且掺杂的掺杂剂 具有等于​​或大于硼的还原活性的至少一种掺杂剂如硼或一些其它强还原杂质在晶体中保留不少于1×10 17 cm -3，并且位错蚀刻坑密度和 表面（111）B的小锥形蚀刻坑密度，已经在65℃的温度下用RC蚀刻剂蚀刻3至5分钟。去除表面上的机械损伤层之后的差值75℃ 超过1×10 5 cm -2，以及制造晶体的方法。

公开(公告)号：US4063972A

公开(公告)日：1977-12-20

申请号：US667867

申请日：1976-03-17

申请人： Shin-ichi Akai ,  Hideki Mori ,  Takashi Shimoda ,  Shin-ichi Iguchi

发明人： Shin-ichi Akai ,  Hideki Mori ,  Takashi Shimoda ,  Shin-ichi Iguchi

IPC分类号： C30B19/00 ,  C30B19/06 ,  C30B19/10 ,  H01L21/208

CPC分类号： C30B19/064 ,  C30B19/106 ,  Y10S117/906 ,  Y10S438/925

摘要： A plurality of single-crystal epitaxial layers of semiconductors are simultaneously grown on a plurality of suitable substrates from the liquid phase by a method which includes the step of consecutively, and at times simultaneously, supplying small portions of liquid solution from a solution reservoir onto all the surfaces of the substrates in a plurality of wells which are provided on a surface of a rotatable circular lower plate so that epitaxial growth can be simultaneously carried out in all wells. The solution reservoir is positioned on a radius of the lower plate on which a circular upper plate is also provided in a non-rotatable state relative to the solution reservoir. Small portions of liquid solution are supplied by rotating the lower plate relative to the upper plate and the solution reservoir, and constrained in shape and volume which are adjusted by the upper plate and the wells. The composition and doping level of epitaxial layers are controlled through vapor-liquid communication.

摘要翻译： 多个半导体单晶外延层通过一种方法从液相同时生长在多个合适的基板上，该方法包括以下步骤：连续地并且有时同时将液体溶液的一小部分从溶液储存器供应到所有 多个孔中的基板的表面设置在可旋转的圆形下板的表面上，使得外延生长可以在所有的孔中同时进行。 溶液储存器定位在下板的半径上，圆形上板也相对于溶液储存器设置在不可旋转的状态。 通过相对于上板和溶液储存器旋转下板来供应液体溶液的小部分，并且受到由上板和井调节的形状和体积的约束。 外延层的组成和掺杂水平通过气液相通来控制。

公开(公告)号：US4618396A

公开(公告)日：1986-10-21

申请号：US675400

申请日：1984-11-27

申请人： Takashi Shimoda ,  Masami Sasaki

发明人： Takashi Shimoda ,  Masami Sasaki

IPC分类号： C30B15/04 ,  C30B15/00 ,  C30B27/02 ,  C30B29/42 ,  B01J17/00 ,  C01B27/00 ,  C04B35/00

CPC分类号： C30B15/00 ,  C30B29/42

摘要： A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform characteristics can be produced, and which may be prepared by a process comprising, at a high temperature and under high pressure, pulling up the single crystal from a raw material melt containing simple substances Ga and As or GaAs compound as well as at least one impurity while controlling the concentration of As so as to keep a distribution coefficient of the impurity in GaAs within 1.+-.0.1.

摘要翻译： 公开了一种GaAs单晶，其包含选自In，Al，C和S中的至少一种杂质，其中杂质浓度的波动在整个晶体中的均匀特性的晶体可以具有小于20％ 并且其可以通过包括在高温和高压下从包含简单物质Ga和As或GaAs化合物的原料熔体以及至少一种杂质中提取单晶的方法来制备，同时控制 As的浓度使GaAs中的杂质分布系数保持在1 +/- 0.1内。

公开(公告)号：US20090195839A1

公开(公告)日：2009-08-06

申请号：US12322403

申请日：2009-02-02

申请人： Hiroshi Iezaki ,  Takashi Shimoda

发明人： Hiroshi Iezaki ,  Takashi Shimoda

IPC分类号： H04N1/00 ,  G09G5/00 ,  H04N1/40

CPC分类号： G06F3/04817

摘要： Provided is an image processing apparatus including: a part storage unit which, among a plurality of parts obtained by dividing an icon included in a display image, stores end parts corresponding to ends of the icon and a plurality of repetition parts included in the divided icon; a correspondence information storage unit which stores correspondence information in which the icon, and the end parts and the repetition parts of the icon and the repeated number of the repetition parts correspond to each other; and a generation control unit which specifies the end parts and the repetition parts corresponding to the icon included in a generated image using the correspondence information stored in the correspondence information storage unit if an image generation instruction for generating a predetermined display image is acquired, reads the specified parts from the part storage unit, and generates the icon using the read end parts and repetition parts and the repeated number of the repetition parts corresponding to the correspondence information.

摘要翻译： 提供一种图像处理装置，包括：部件存储单元，在通过划分显示图像中包括的图标而获得的多个部分中存储与图标的末端对应的端部和包括在分割图标中的多个重复部分 ; 对应信息存储单元，其存储图标，图标的结束部分和重复部分以及重复部分的重复数量彼此对应的对应信息; 以及生成控制单元，如果获取了用于生成预定显示图像的图像生成指令，则使用存储在对应信息存储单元中的对应信息来指定与生成的图像中包括的图标对应的结束部分和重复部分，读取 并且使用读取结束部分和重复部分以及对应于对应信息的重复部分的重复次数生成图标。