摘要:
Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.
摘要翻译:具有低缺陷密度的磷化镓单晶,其通过液体封装Czochralski拉制法制造,其特征在于它们掺杂或未掺杂至少一种在磷化镓中具有电活性并且掺杂的掺杂剂 具有等于或大于硼的还原活性的至少一种掺杂剂如硼或一些其它强还原杂质在晶体中保留不少于1×10 17 cm -3,并且位错蚀刻坑密度和 表面(111)B的小锥形蚀刻坑密度,已经在65℃的温度下用RC蚀刻剂蚀刻3至5分钟。去除表面上的机械损伤层之后的差值75℃ 超过1×10 5 cm -2,以及制造晶体的方法。
摘要:
A plurality of single-crystal epitaxial layers of semiconductors are simultaneously grown on a plurality of suitable substrates from the liquid phase by a method which includes the step of consecutively, and at times simultaneously, supplying small portions of liquid solution from a solution reservoir onto all the surfaces of the substrates in a plurality of wells which are provided on a surface of a rotatable circular lower plate so that epitaxial growth can be simultaneously carried out in all wells. The solution reservoir is positioned on a radius of the lower plate on which a circular upper plate is also provided in a non-rotatable state relative to the solution reservoir. Small portions of liquid solution are supplied by rotating the lower plate relative to the upper plate and the solution reservoir, and constrained in shape and volume which are adjusted by the upper plate and the wells. The composition and doping level of epitaxial layers are controlled through vapor-liquid communication.
摘要:
Single-crystal epitaxial layers of compound semiconductors or mixed semiconductors are grown on suitable substrates from the liquid phase, which consists of a molten metallic solvent dissolving a source material of the semiconductors, and within which the temperature gradient is produced so that in a high temperature region of the liquid solution a solid source material is dissolving into the liquid solution with at least a portion of the solid source material always at an undissolved state and in a low temperature region of the liquid solution an epitaxial layer is depositing onto the substrate, the temperatures in the liquid solution being kept constant during the epitaxial growth. Each substrate is positioned in one of a number of slots which are provided in the upper surface of a slider and it is successively transferred with the slider to contact with the liquid solution. The composition and/or the doping level of each epitaxial layer are controlled by the composition and/or the doping level of the solid source material which is selected from a pre-synthesized material, i.e., a solid film produced on the liquid solution by supersaturation and a film deposited on the liquid solution from the vapor phase.
摘要:
An image forming apparatus includes an image bearing member; a belt unit which is rotatable in contact with the image bearing member and which is capable of being drawn out of a main assembly of the image forming apparatus; a cam member for switching a position of the belt member relative to the image bearing member; a motor for rotating the cam member; a controller for controlling the motor to contact and space the belt member relative to the image bearing member; a lever movable between a first position in which the belt member is fixed to the main assembly of the image forming apparatus and a second position in which the belt member is capable of being drawn out of the main assembly of the image forming apparatus; and a spacing mechanism for spacing the belt member from the image bearing member by converting movement of the lever from the first position to the second position to a rotation of the cam member, when the belt member is contacted to the image bearing member.
摘要:
An information processing apparatus includes a first classification unit configured to set each of pixels forming a first image as a pixel of interest and classify the pixels of interest into one of a plurality of provided classes of a first type in accordance with a predetermined rule; a feature amount generation unit configured to generate a shifted waveform whose phase is shifted with respect to a waveform of the first image containing the pixels of interest and configured to generate a feature amount; a second classification unit configured to be provided with a plurality of classes of a second type in accordance with the feature amount for each of the plurality of classes of the first type and configured to classify the pixels of interest; and a prediction calculation unit configured to predictively calculate pixels forming a second image.
摘要:
An inspection apparatus of a disk-shaped substrate able to precisely quantitatively inspect positions of formation of film layers formed on the surface of a disk-shaped substrate is provided, that is, an inspection apparatus of a disk-shaped substrate on which film layers are formed designed to generate captured image data expressing a captured image corresponding to a field of view based on image signals successively output from an image capturing unit capturing an image of a predetermined surface at an outer circumference part of the disk-shaped substrate and to generate film layer edge position information Y4E24 (θ) expressing longitudinal direction positions at corresponding positions (θ) along the circumferential direction of an edge line E24 of a film layer image part ISa (24) corresponding to the film layer 24 on the surface image ISa with reference to, from the captured image data, longitudinal direction positions YE15aL (θ) at the different positions (θ) along the circumferential direction of a boundary line E15a between a surface image part ISa corresponding to the predetermined surface on the captured image and its outer image part IBKL.
摘要:
[Problem] An inspecting device and an inspecting method enabling better precision inspection for a processing region formed on a surface of a semiconductor wafer or other disc wafer are provided.[Means for Solution] The inspecting device is configured having image capturing means 130a, 130b for capturing an image of an outer edge and its neighboring region of a rotating wafer 10, wafer outer edge position measuring means 200 for measuring the radial direction position of the outer edge at each of the plurality of rotational angle positions θn of the wafer 10 based on the images obtained by the image capturing means 130a, 130b, an edge-to-edge distance measuring means 200 for measuring the edge-to-edge distance Bθn, between the outer edge of the wafer 10 and the edge of an insulating film 11 at each of the plurality of rotational angle positions θn based on the images obtained by the image capturing means 130a, and an inspection information generating means 200 for generating predetermined inspection information based on the radial direction position Aθn of the outer edge of the wafer 10 and the edge-to-edge distance Bθn.
摘要:
[Problem] To provide a surface inspection apparatus able to suitably inspect the outer circumference edge part of a semiconductor wafer or other plate-shaped member.[Technical Solution] A semiconductor wafer inspection apparatus 10 has a camera lens 22 arranged facing an outer circumference edge part 101 of a semiconductor wafer 100, an imaging surface 24 arranged facing an outer circumference end face of a semiconductor wafer 100 via the camera lens 22, a mirror 12 forming an image of a first outer circumference bevel surface 101b of the semiconductor wafer 100 on the imaging surface 24 via the camera lens 22, a mirror 14 forming an image of a second outer circumference bevel surface 101c of the semiconductor wafer 100 on the imaging surface 24 via the camera lens 22, a correction lens 26 forming an image of an outer circumference end face 101a of the semiconductor wafer 100 on the imaging surface 24 via the center part of the camera lens 22, and an illumination light guide lamp part 18 illuminating surfaces so that, compared with the outer circumference end face 101a, the first outer circumference bevel surface 101b and second outer circumference bevel surface 101c become brighter.
摘要:
[Problem] To provide a surface roughness inspection system enabling suitable inspection even when the surface of the object being inspected is curved.[Means for Solution] A system having an imaging unit 20 having a line sensor 22 and scanning the surface of an object being inspected 101 in a direction perpendicular to the direction of extension of the line sensor 22 and outputting a density signal for each pixel from the line sensor 22 and a processing unit 50 processing the density signal from the line sensor 22 of the imaging unit 20, the processing unit 50 having a means for acquiring a pixel density value based on a density signal from the line sensor 22 (S2) and a density state generating means for generating a density state information Pf showing the density state in the scan direction of the object surface based on all of the pixel density values acquired for the object surface 101 being inspected (S7).
摘要:
A counter reflecting surface is provided opposite to a light emitting element in its light emitting surface. A side reflecting member having an inclined reflecting surface is provided apart from and so as to surround the light emitting element. A phosphor layer is provided on the counter reflecting surface and the reflecting surface of the side reflecting member.