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公开(公告)号：US08013407B2
公开(公告)日：2011-09-06
申请号：US12399760
申请日：2009-03-06
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译： 提供了一种在写特性上稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。
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公开(公告)号：US20090250776A1
公开(公告)日：2009-10-08
申请号：US12399760
申请日：2009-03-06
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。
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公开(公告)号：US08269295B2
公开(公告)日：2012-09-18
申请号：US13088725
申请日：2011-04-18
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。
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公开(公告)号：US20110193185A1
公开(公告)日：2011-08-11
申请号：US13088725
申请日：2011-04-18
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。
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5.发明授权公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。
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6.发明申请Magnetic recording element and method of manufacturing magnetic recording element 审中-公开磁记录元件及制造磁记录元件的方法公开(公告)号：US20080168649A1
公开(公告)日：2008-07-17
申请号：US12076151
申请日：2008-03-14
IPC分类号： G11B5/127
CPC分类号： H01L43/12 , G11C11/16 , H01L27/228 , Y10T29/49041 , Y10T29/49048
摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).
摘要翻译： 执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和 带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。 在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向 限定掩模（S11）。
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7.发明申请SEMICONDUCTOR DEVICE INCLUDING A MAGNETIC TUNNEL JUNCTION DEVICE INCLUDING A LAMINATED STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权包括包括层压结构在内的磁性隧道连接装置的半导体装置及其制造方法公开(公告)号：US20120301975A1
公开(公告)日：2012-11-29
申请号：US13566739
申请日：2012-08-03
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。
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8.发明授权公开(公告)号：US08383427B2
公开(公告)日：2013-02-26
申请号：US13566739
申请日：2012-08-03
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。
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公开(公告)号：US20090302404A1
公开(公告)日：2009-12-10
申请号：US12463865
申请日：2009-05-11
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having an MTJ device excellent in operating characteristics and a manufacturing method therefor are obtained. The MTJ device is formed of a laminated structure obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower magnetic film and the upper magnetic film contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film of the MTJ device and a hard mask is formed over the CAP layer. The CAP layer contains a simple substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a simple substance of crystalline tantalum (Ta) as a constituent material. The hard mask is so formed that the film thickness thereof is larger than the film thickness of the CAP layer.
摘要翻译： 获得具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜获得的层叠结构形成。 下磁性膜和上磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在MTJ装置的上部磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）的单一物质作为构成材料，硬掩模含有作为构成材料的结晶钽（Ta）的单一物质。 硬掩模被形成为使得其膜厚度大于CAP层的膜厚度。
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10.发明授权公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。
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