Semiconductor light-emitting device
    1.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号:US06952025B2

    公开(公告)日:2005-10-04

    申请号:US10048854

    申请日:2001-06-05

    CPC分类号: H01L33/46

    摘要: A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 106 Ωm or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 μm and a length falling within a range of 0.01-100 μm.

    摘要翻译: 提供了高发射方向性和高输出的小尺寸半导体发光器件。 包括pn结部分的半导体发光器件的光提取部分的一部分被低导电性的遮光物体覆盖。 遮光物质的电阻为10 -6Ω以上,该物质含有选自金属和颜料中的至少一种的粉末。 金属粉末含有选自Al,Cu,Ag,Au,Pt,Ti,Ni,Sn,Pb,Mg,Zn,Fe,Co和Cr中的至少一种。 粉末是厚度在0.001-10μm范围内且长度落在0.01-100μm范围内的板状粉末。

    Polishing composition and polishing method
    4.
    发明申请
    Polishing composition and polishing method 审中-公开
    抛光组合物和抛光方法

    公开(公告)号:US20070128872A1

    公开(公告)日:2007-06-07

    申请号:US10579335

    申请日:2004-11-15

    IPC分类号: H01L21/44 H01L21/302

    摘要: As a polishing composition which allows high-speed polishing while dishing and erosion are prevented and the flatness of metal film is maintained, there is provided a polishing composition for polishing a metal film provided on a substrate having trenches such that the metal film fills the trenches, so as to provide a planarized surface, wherein the composition comprises water, a phosphate ester having a C≧6 carbon atom alkyl group in its molecule, and an etchant for the metal, and has a pH of 5 to 11.

    摘要翻译: 作为能够防止凹陷和侵蚀而进行高速抛光并且保持金属膜的平坦度的抛光组合物,提供了一种用于抛光设置在具有沟槽的基底上的金属膜的抛光组合物,使得金属膜填充沟槽 ,以提供平坦化的表面,其中组合物包含水,分子中具有C> = 6个碳原子烷基的磷酸酯和金属的蚀刻剂,并且具有5至11的pH。

    Polishing material composition and polishing method for polishing LSI devices
    6.
    发明授权
    Polishing material composition and polishing method for polishing LSI devices 有权
    用于抛光LSI器件的抛光材料组成和抛光方法

    公开(公告)号:US06299659B1

    公开(公告)日:2001-10-09

    申请号:US09564205

    申请日:2000-05-04

    IPC分类号: C09K314

    CPC分类号: C09G1/02 C09K3/1463

    摘要: A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.

    摘要翻译: 一种用于抛光LSI器件的抛光材料组合物,其是用偶联剂表面处理的包含水和氧化铈的抛光材料组合物,其中最大值不大于约5μm,平均值 在氧化铈的二次粒径分布中为约0.01〜1.0μm。 另外,采用该研磨材料组合物的LSI装置的研磨方法。

    Preparation of polymer having isoindole structures
    7.
    发明授权
    Preparation of polymer having isoindole structures 失效
    具有异吲哚结构的聚合物的制备

    公开(公告)号:US4954590A

    公开(公告)日:1990-09-04

    申请号:US327875

    申请日:1989-03-23

    IPC分类号: C08G73/06 C08G61/12 H01B1/12

    CPC分类号: C08G61/124 H01B1/127

    摘要: A polymer having an isoindole structure represented by the following general formula: ##STR1##wherein R.sup.1, R.sup.2 and R.sup.3 independently represent a hydrogen atom or a hydrocarbon group having 1 to 5 carbon atoms, X.sup.- represents an anion of an electrolyte, y is a number of from 0.01 to 1, which indicates the proportion of the anion to 1 mole of the monomer, and n is a number of from 5 to 500, which indicates the degree of polymerization,shows a high electroconductivity when doped, and the stability of the polymer in the oxidized state is high. This polymer is obtained by subjecting an isoindole compound represented by the following general formula: ##STR2## wherein R.sup.1, R.sup.2 and R.sup.3 are as defined above, to (1) electrochemical polymerization in the presence of an electrolyte in a solvent or (2) oxidative polymerization in a solvent by the action of an oxidant.

    Water resistance imparter, ink composition, reactive fluid, and method of ink-jet recording with two fluids
    10.
    发明授权
    Water resistance imparter, ink composition, reactive fluid, and method of ink-jet recording with two fluids 有权
    耐水突变体,油墨组合物,反应性流体以及用两种流体喷墨记录的方法

    公开(公告)号:US06498222B1

    公开(公告)日:2002-12-24

    申请号:US09744090

    申请日:2001-03-09

    IPC分类号: C08F22602

    摘要: Disclosed is a cationic water-soluble resin which comprises a (co)polymer of, in formula (I), repeating units (a) represented by formula (a) and repeating units (b) represented by formula (b), the content of the repeating units (a) in the (co)polymer being 100 to 0% by mole, the (co)polymer having in its molecule a carboxyl-containing group as one of the terminal groups and an aromatic ring-containing group as the other terminal group. The addition of this resin to ink compositions can realize the formation of images possessing excellent waterfastness and lightfastness and having no significant feathering or color bleeding. Likewise, the addition of this resin to a reaction solution for ink jet recording involving the deposition of two liquids, an ink composition and a reaction solution, onto a recording medium, can realize the formation of images possessing excellent waterfastness and lightfastness and no significant feathering or color bleeding. wherein R1 represents hydrogen or methyl; R2 and R3 represent C1-3 alkyl; R4 represents hydrogen or methyl; R5, R6, and R7 represent C1-3 alkyl; Z− represents a counter ion; and k and 1 are each 1, 2, or 3.

    摘要翻译: 公开了一种阳离子型水溶性树脂,其包含式(I)中的(共)聚合物,由式(a)表示的重复单元(a)和由式(b)表示的重复单元(b)),其含量 (共)聚合物中的重复单元(a)为100〜0摩尔%,在其分子中具有含羧基的端基中的(共)聚合物和作为其它的含芳环的基团 终端组。 将这种树脂添加到油墨组合物中可以实现具有优异的耐水性和耐光性并且没有明显的羽化或着色渗色的图像的形成。 同样地,将这种树脂添加到用于喷墨记录的反应溶液中,包括将两种液体,油墨组合物和反应溶液沉积在记录介质上,可以实现具有优异耐水性,耐光性和无明显羽化的图像的形成 或颜色渗色。其中R1表示氢或甲基; R2和R3表示C1-3烷基; R4代表氢或甲基; R5,R6和R7表示C1-3烷基; Z-表示抗衡离子; 而k和1分别为1,2或3。